AO4728

AO4728 30V N-Channel MOSFET 65)(770 General Description Product Summary TM SRFET AO4728 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is ideally suited for use as a low side switch in CPU core power conversion. VDS (V) = 30V ID = 20A (VGS = 10V) RDS(ON) < 4.3mΩ RDS(ON) < 6mΩ (VGS = 10V) (VGS = 4.5V) 100% UIS Tested 100% Rg Tested SOIC-8 Top View D D ' Bottom View SRFETTM Soft Recovery MOSFET: Integrated Schottky Diode D D * G S 6 S S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current Pulsed Drain Current C Repetitive avalanche energy L=0.1mH TC=25°C Power Dissipation B TC=70°C C Thermal Characteristics Parameter Maximum Junction-to-Ambient A AD Maximum Junction-to-Ambient Maximum Junction-to-Lead Alpha & Omega Semiconductor, Ltd. V A 146 IAR 40 A EAR 80 mJ 3.1 PD Junction and Storage Temperature Range ±20 17 IDM Avalanche Current C Units V 20 ID TC=70°C Maximum 30 TJ, TSTG -55 to 150 Symbol t ” 10s Steady-State Steady-State W 2 RθJA RθJL Typ 31 59 16 °C Max 40 75 24 Units °C/W °C/W °C/W www.aosmd.com AO4728 Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250μA, VGS=0V 0.1 IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS= ±20V Gate Threshold Voltage On state drain current VDS=VGS ID=250μA 1.2 VGS=10V, VDS=5V 146 TJ=125°C 20 VGS=10V, ID=20A Static Drain-Source On-Resistance Units V VDS=30V, VGS=0V Zero Gate Voltage Drain Current RDS(ON) Max 30 IDSS ID(ON) Typ TJ=125°C VGS=4.5V, ID=18A 0.1 μA 1.8 2.2 V 3.6 4.3 5.5 6.6 4.8 6 A gFS Forward Transconductance VDS=5V, ID=20A 87 VSD Diode Forward Voltage IS=1A,VGS=0V 0.4 IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance mA mΩ mΩ S 0.7 V 6 A 2975 3719 4463 pF 485 693 900 pF 204 340 476 pF 0.28 0.56 0.84 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 48 60 72 nC Qg(4.5V) Total Gate Charge 20 25 30 nC 12 15 18 nC 10 14 nC Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Qgs Gate Source Charge VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=15V, ID=20A Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time IF=20A, dI/dt=500A/μs 10 13 16 Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/μs 21 26.5 32 Body Diode Reverse Recovery Time 6 VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω 9.2 ns 10.7 ns 40 ns 12.5 ns ns nC 2 A. The value of RθJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ” 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using