AO4800

AO4800 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4800 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in buck converters. Standard Product AO4800 is Pb-free (meets ROHS & Sony 259 specifications). AO4800L is a Green Product ordering option. AO4800 and AO4800L are electrically identical. VDS (V) = 30V ID = 6.9A (VGS = 10V) RDS(ON) < 27mΩ (VGS = 10V) RDS(ON) < 32mΩ (VGS = 4.5V) RDS(ON) < 50mΩ (VGS = 2.5V) S2 G2 S1 G1 1 2 3 4 8 7 6 5 G2 G1 SOIC-8 VGS Gate-Source Voltage TA=25°C Continuous Drain Current A B Junction and Storage Temperature Range Alpha & Omega Semiconductor, Ltd. Units V ±12 V ID 5.8 IDM 40 W 1.44 TJ, TSTG -55 to 150 Symbol t ≤ 10s Steady-State Steady-State A 2 PD TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Maximum 30 6.9 TA=70°C TA=25°C Power Dissipation S2 S1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Pulsed Drain Current D2 D1 D2 D2 D1 D1 RθJA RθJL Typ 48 74 35 °C Max 62.5 110 40 Units °C/W °C/W °C/W AO4800 Electrical Characteristics (T J=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V 30 VDS=24V, V GS=0V Gate-Body leakage current VDS=0V, VGS=±12V Gate Threshold Voltage VDS=VGS ID=250µA 0.7 ID(ON) On state drain current VGS=4.5V, VDS=5V 25 nA V 22.6 27 33 40 VGS=4.5V, ID=6.0A 27 32 mΩ VGS=2.5V, ID=5A 42 50 mΩ Forward Transconductance VSD Diode Forward Voltage IS=1A Maximum Body-Diode Continuous Current VDS=5V, ID=5A DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge µA 1.4 gFS Crss V 100 TJ=125°C Coss 1 Units 1 VGS=10V, ID=6.9A IS 0.002 5 IGSS Static Drain-Source On-Resistance Max TJ=55°C VGS(th) RDS(ON) Typ 12 A 16 0.71 858 VGS=0V, VDS=15V, f=1MHz mΩ S 1 V 3 A 1050 pF 110 pF 80 pF VGS=0V, VDS=0V, f=1MHz 1.24 3.6 Ω 9.6 12 nC VGS=4.5V, VDS=15V, ID=6.9A 1.65 nC Qgd Gate Drain Charge 3 tD(on) Turn-On DelayTime 3.2 4.8 ns tr Turn-On Rise Time 4.1 6.2 ns 26.3 40 ns 3.7 5.5 ns VGS=10V, V DS=15V, R L=2.2Ω, RGEN=3Ω nC tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery time IF=5A, dI/dt=100A/µs 15.5 20 ns Qrr Body Diode Reverse Recovery charge IF=5A, dI/dt=100A/µs 7.9 12 nC A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. Rev 4 : July 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AO4800 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 20 10V 3V 25 20 2.5V ID(A) ID (A) VDS=5V 16 4.5V 15 10 12 8 VGS=2V 125°C 4 5 25°C 0 0 0 1 2 3 4 0 5 0.5 60 2 2.5 3 Normalized On-Resistance 1.7 VGS=2.5V 50 RDS(ON) (mΩ) 1.5 VGS (Volts) Figure 2: Transfer Characteristics VDS (Volts) Fig 1: On-Region Characteristics 40 VGS=4.5V 30 20 VGS=10V 10 0 5 10 15 1.6 ID=5A 1.5 VGS=10V VGS=4.5V 1.4 1.3 VGS=2.5V 1.2 1.1 1 0.9 0.8 20 0 ID (Amps) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 50 100 150 200 Temperature ( °C) Figure 4: On-Resistance vs. Junction Temperature 70 1.0E+01 60 1.0E+00 ID=5A 50 125°C 40 125°C 1.0E-01 IS Amps RDS(ON) (mΩ) 1 1.0E-02 1.0E-03 1.0E-04 30 1.0E-06 0.00 10 0 2 4 6 8 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 25°C 1.0E-05 25°C 20 10 0.25 0.50 0.75 1.00 1.25 VSD (Volts) Figure 6: Body diode characteristics 1.50 AO4800 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1500 5 VDS=15V ID=6.9A Capacitance (pF) VGS (Volts) 4 f=1MHz VGS=0V 1250 3 2 Ciss 1000 1 750 500 Coss 250 0 0 0 2 4 6 8 10 12 0 Qg (nC) Figure 7: Gate-Charge characteristics Power W 10ms 0.1s 1.0 15 20 25 30 TJ(Max)=150°C TA=25°C 30 100µs 1ms 10.0 10 40 TJ(Max)=150°C TA=25°C RDS(ON) limited 5 VDS (Volts) Figure 8: Capacitance Characteristics 100.0 ID (Amps) Crss 1s 20 10 10s DC 0 0.001 0.1 0.1 1 10 100 VDS (Volts) ZθJA Normalized Transient Thermal Resistance D=T on/T TJ,PK=T A+PDM.ZθJA.RθJA RθJA=62.5°C/W 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 0.01 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 PD Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 T 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 100 1000