AO4800B

AO4800B, AO4800BL Dual N-Channel Enhancement Mode Field Effect Transistor General Description The AO4800B/L uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in buck converters. Standard Product AO4800B/L is Pb-free (meets ROHS & Sony 259 specifications). Features VDS (V) = 30V ID = 6.9A (VGS = 10V) RDS(ON) < 27mΩ (VGS = 10V) RDS(ON) < 32mΩ (VGS = 4.5V) RDS(ON) < 50mΩ (VGS = 2.5V) UIS TESTED! Rg,Ciss,Coss,Crss Tested! S2 G2 S1 G1 1 2 3 4 8 7 6 5 D2 D2 D1 D1 G1 D1 D2 SOIC-8 G2 S1 S2 Absolute Maximum Ratings T =25°C unless otherwise noted A Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current AF Pulsed Drain Current Power Dissipation B Avalanche Current B Maximum 30 ±12 6.9 5.8 40 1.9 1.2 12 22 -55 to 150 Units V V A TA=25°C TA=70°C TA=25°C TA=70°C B ID IDM PD IAR EAR TJ, TSTG W A mJ °C Repetitive avalanche energy 0.3mH Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-AmbientAF Maximum Junction-to-AmbientA Maximum Junction-to-LeadC Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL Typ 55 90 40 Max 62.5 110 48 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO4800B/L Electrical Characteristics (T J=25°C unless otherwise noted) Symbol Parameter Conditions ID=250 µA, VGS=0V VDS=24V, VGS=0V TJ=55°C VDS=0V, VGS= ±12V VDS=VGS ID=250 µA VGS=4.5V, V DS=5V VGS=10V, I D=6.9A RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=4.5V, I D=6A VGS=2.5V, I D=5A gFS VSD IS Forward Transconductance VDS=5V, ID=5A 10 Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current 0.7 40 20 25 23 34 26 0.71 1 4.5 900 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 88 65 0.95 10 VGS=4.5V, V DS=15V, I D=8.5A 1.8 3.75 3.2 VGS=10V, VDS=15V, RL=1.8Ω, RGEN=6Ω IF=5A, dI/dt=100A/ µs IF=5A, dI/dt=100A/ µs 3.5 21.5 2.7 16.8 8 20 12 1.5 12 1100 27 40 32 50 1 Min 30 0.002 1 5 100 1.5 Typ Max Units V µA nA V A mΩ mΩ mΩ S V A pF pF pF Ω nC nC nC ns ns ns ns ns nC STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd tD(on) tr tD(off) tf trr Qrr Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using