AO4800L

AO4800 30V Dual N-Channel MOSFET General Description Product Summary The AO4800 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in buck converters. ID (at VGS=10V) VDS 30V 6.9A RDS(ON) (at VGS=10V) < 27mΩ RDS(ON) (at VGS = 4.5V) < 32mΩ RDS(ON) (at VGS = 2.5V) < 50mΩ 100% UIS Tested 100% Rg Tested SOIC-8 Top View D2 D1 Bottom View Top View S2 G2 S1 G1 1 2 3 4 8 7 6 5 D2 D2 D1 D1 G2 G1 S1 S2 Pin1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current VGS TA=25°C Units V ±12 V 6.9 ID TA=70°C Maximum 30 5.8 A Pulsed Drain Current C IDM 40 Avalanche Current C IAS, IAR 14 A Avalanche energy L=0.1mH C TA=25°C EAS, EAR 10 mJ Power Dissipation B Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead Rev 6: Dec 2011 2 PD TA=70°C TJ, TSTG Symbol t ≤ 10s Steady-State Steady-State W 1.3 RθJA RθJL www.aosmd.com -55 to 150 Typ 48 74 32 °C Max 62.5 90 40 Units °C/W °C/W °C/W Page 1 of 6 AO4800 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V TJ=55°C Gate-Body leakage current VDS=0V, VGS= ±12V VDS=VGS ID=250µA 0.7 ID(ON) On state drain current VGS=4.5V, VDS=5V 25 100 nA 1.1 1.5 V 17.8 27 28 40 VGS=4.5V, ID=6A 19 32 mΩ VGS=2.5V, ID=5A 24 50 mΩ VGS=10V, ID=6.9A TJ=125°C A gFS Forward Transconductance VDS=5V, ID=5A 33 VSD Diode Forward Voltage IS=1A,VGS=0V 0.7 IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr VGS=4.5V, VDS=15V, ID=6.9A 1.5 mΩ S 1 V 2.5 A 630 pF 75 pF 50 SWITCHING PARAMETERS Qg Total Gate Charge Qgs µA 5 Gate Threshold Voltage Units V 1 IGSS Static Drain-Source On-Resistance Max 30 VDS=30V, VGS=0V VGS(th) RDS(ON) Typ pF 3 4.5 6 7 Ω nC 1.3 nC 1.8 nC 3 ns VGS=10V, VDS=15V, RL=2.2Ω, RGEN=3Ω 2.5 ns 25 ns 4 ns IF=5A, dI/dt=100A/µs 8.5 Body Diode Reverse Recovery Charge IF=5A, dI/dt=100A/µs 2.6 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using