AO4801A

AO4801A Dual P-Channel Enhancement Mode Field Effect Transistor General Description The AO4801A uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AO4801A is Pb-free (meets ROHS & Sony 259 specifications) Features VDS (V) = -30V ID =-5.6A (VGS = 10V) RDS(ON) < 42mΩ (VGS = 10V) RDS(ON) < 52mΩ (VGS = 4.5V) RDS(ON) < 75mΩ (VGS = 2.5V) UIS TESTED! Rg,Ciss,Coss,Crss Tested SOIC-8 Top View S2 G2 S1 G1 1 2 3 4 8 7 6 5 D2 D2 D1 D1 D1 D2 G1 S1 G2 S2 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol 10 Sec VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current AF Pulsed Drain Current Avalanche Current B B Steady State Units V -30 ±12 4.2 3.4 -30 11 18 TA=25°C TA=70°C IDSM IDM IAR EAR PDSM TJ, TSTG TA=25°C 5.6 4.5 A Repetitive avalanche energy L=0.3mH B Power Dissipation TA=70°C mJ 1.1 0.7 W °C 2.0 1.3 -55 to 150 Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Lead C A A Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL Typ 48 74 35 Max 62.5 110 40 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO4801A Electrical Characteristics (T J=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Conditions ID=-250uA, VGS=0V VDS=-30V, VGS=0V TJ=55°C VDS=0V, VGS=±12V VDS=VGS ID=-250µA VGS=-4.5V, VDS=-5V VGS=-10V, ID=-5.6A RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=-4.5V, ID=-3.5A VGS=-2.5V, ID=-2.5A gFS VSD IS Forward Transconductance VDS=-5V, ID=-5.6A IS=-1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current -0.6 -25 34 48 41 60 14 -0.74 -1 -2 933 VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 108 81 6 9.3 VGS=-4.5V, VDS=-15V, ID=-5.6A 1.5 3.7 5.2 VGS=-10V, VDS=-15V, RL=2.7Ω, RGEN=6Ω IF=-5.6A, dI/dt=100A/µs 6.8 42 15 21 14.3 28 9 12.2 1200 42 60 52 75 -0.95 Min -30 -1 -5 ±100 -1.3 Typ Max Units V uA nA V A mΩ mΩ mΩ S V A pF pF pF Ω nC nC nC ns ns ns ns ns nC DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd tD(on) tr tD(off) tf trr Qrr Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=-5.6A, dI/dt=100A/µs A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using