AO4801AL_001

AO4801AL 30V Dual P-Channel MOSFET General Description Product Summary The AO4801AL combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).This device is suitable for use as a load switch or in PWM applications. ID (at VGS=-10V) -30V -5.6A RDS(ON) (at VGS=-10V) < 42mΩ VDS RDS(ON) (at VGS = -4.5V) < 52mΩ RDS(ON) (at VGS = -2.5V) < 75mΩ 100% UIS Tested 100% Rg Tested SOIC-8 D1 D2 SOIC-8 Top View S2 G2 S1 G1 1 2 3 4 8 7 6 5 D2 D2 D1 D1 G1 G2 S1 Absolute Maximum Ratings TA=25°C unless otherwise noted 10 Sec Symbol Parameter Drain-Source Voltage VDS -30 Gate-Source Voltage ±12 Continuous Drain Current VGS TA=25°C IDSM TA=70°C Steady State -5.6 S2 Units V V -4.2 -4.5 -3.4 A Pulsed Drain Current C IDM Avalanche Current C IAS, IAR 11 A Avalanche energy L=0.3mH C TA=25°C EAS, EAR 18 mJ Power Dissipation B PDSM TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead Rev 2: Dec 2010 -30 Steady-State Steady-State 1.4 0.9 TJ, TSTG Symbol t ≤ 10s 2 1.3 RθJA RθJL www.aosmd.com -55 to 150 Typ 48 74 32 W °C Max 62.5 90 40 Units °C/W °C/W °C/W Page 1 of 5 AO4801AL Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=-250µA, VGS=0V -30 IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS= ±12V Gate Threshold Voltage VDS=VGS ID=-250µA -0.6 ID(ON) On state drain current VGS=-4.5V, VDS=-5V -25 TJ=55°C ±100 nA -0.95 -1.3 V 34 42 48 60 VGS=-4.5V, ID=-3.5A 41 52 mΩ VGS=-2.5V, ID=-2.5A 60 75 mΩ 14 TJ=125°C gFS Forward Transconductance VDS=-5V, ID=-5.6A VSD Diode Forward Voltage IS=-1A,VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Qrr µA -5 VGS=-10V, ID=-5.6A Coss Units -1 Zero Gate Voltage Drain Current Static Drain-Source On-Resistance Max V VDS=-30V, VGS=0V IDSS RDS(ON) Typ VGS=-4.5V, VDS=-15V, ID=-5.6A A -0.74 mΩ S -1 V -2 A 750 933 1120 pF 75 108 140 pF 50 81 110 pF 3 6 9 Ω 7.4 9.3 11 nC 1.2 1.5 1.8 nC 2.2 3.7 5.2 nC 5.2 VGS=-10V, VDS=-15V, RL=2.7Ω, RGEN=6Ω IF=-5.6A, dI/dt=100A/µs Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=-5.6A, dI/dt=100A/µs ns 6.8 ns 42 ns 15 ns 16.8 21 25.2 11.4 14.3 17.2 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using