AO4802L

Rev 2: Nov 2004 AO4802, AO4802L ( Green Product ) Dual N-Channel Enhancement Mode Field Effect Transistor General Description The AO4802 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. They offer operation over a wide gate drive range from 1.8V to 12V. The two devices may be used individually, in parallel or to form a bidirectional blocking switch. AO4802L ( Green Product ) is offered in a lead-free package. Features VDS (V) = 30V ID = 7A RDS(ON) < 26m Ω (VGS = 10V) RDS(ON) < 30m Ω (VGS = 4.5V) RDS(ON) < 40m Ω (VGS = 2.5V) RDS(ON) < 70m Ω (VGS = 1.8V) D1 S2 G2 S1 G1 D2 D2 D1 D1 D2 1 2 3 4 8 7 6 5 G1 S1 G2 S2 SOIC-8 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation B Maximum 30 ±12 7 6 40 2 1.44 -55 to 150 Units V V A VGS TA=25°C TA=70°C TA=25°C TA=70°C ID IDM PD TJ, TSTG W °C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL Typ 48 74 35 Max 62.5 110 40 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. AO4802, AO4802L Electrical Characteristics (T J=25°C unless otherwise noted) Symbol Parameter Conditions ID=250 µA, VGS=0V VDS=24V, VGS=0V TJ=55°C VDS=0V, VGS=±12V VDS=VGS ID=250 µA VGS=4.5V, V DS=5V VGS=10V, I D=7A TJ=125°C RDS(ON) Static Drain-Source On-Resistance VGS=4.5V, I D=6A VGS=2.5V, I D=4A VGS=1.8V, I D=2A gFS VSD IS Forward Transconductance VDS=5V, ID=5A 12 Diode Forward Voltage IS=1A Maximum Body-Diode Continuous Current 0.6 30 22 28 25 34 52 17 0.66 1 3 767 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 111 82 1.3 10 VGS=4.5V, V DS=15V, I D=7A 1.2 3.1 5 VGS=10V, VDS=15V, RL=2.2Ω, RGEN=6Ω IF=5A, dI/dt=100A/ µs IF=5A, dI/dt=100A/ µs 5.5 39 4.7 15 7.1 26 36 30 40 70 0.8 Min 30 1 5 100 1 Typ Max Units V µA nA V A mΩ mΩ mΩ mΩ S V A pF pF pF Ω nC nC nC ns ns ns ns ns nC STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd tD(on) tr tD(off) tf trr Qrr Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery time Body Diode Reverse Recovery charge A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in any a given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using 80µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AO4802, AO4802L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 25 20 2.5V 15 ID (A) 10 5 0 0 1 2 3 4 5 VDS (Volts) Fig 1: On-Region Characteristics 70 Normalized On-Resistance 60 RDS(ON) (mΩ ) 50 40 30 20 10 0 5 10 VGS=10V 15 20 VGS=1.8V 1.8 1.6 1.4 1.2 1 0.8 0 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature VGS=10V 2V ID(A) 12 8 4 0 0 0.5 1.5 2 2.5 VGS(Volts) Figure 2: Transfer Characteristics 1 3 125°C 25°C 10V 4.5V 16 20 VDS=5V VGS=1.5V VGS=4.5V VGS=2.5V VGS=4.5V VGS=2.5V VGS=1.8V ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 80 70 60 RDS(ON) (mΩ ) 50 40 30 20 10 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 25°C 125°C ID=5A IS (A) 1.0E+01 1.0E+00 1.0E-01 1.0E-02 1.0E-03 1.0E-04 1.0E-05 1.0E-06 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics 25°C 125°C Alpha & Omega Semiconductor, Ltd. AO4802, AO4802L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 4 VGS (Volts) 3 2 1 200 0 0 2 4 6 8 10 12 Qg (nC) Figure 7: Gate-Charge Characteristics 0 0 5 10 15 20 25 30 VDS (Volts) Figure 8: Capacitance Characteristics 1400 VDS=15V ID=7A Capacitance (pF) 1200 1000 800 600 400 Coss Crss Ciss 100.0 10µs 10.0 RDS(ON) limited 100µs 10ms 0.1s 1.0 TJ(Max)=150°C TA=25°C 0.1 0.1 1 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 1s 10s DC Power (W) 1ms 40 TJ(Max)=150°C TA=25°C 30 ID (Amps) 20 10 0 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 10 Zθ JA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=62.5°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 PD T on Single Pulse T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd.