AO4803A

AO4803A Dual P-Channel Enhancement Mode Field Effect Transistor General Description The AO4803A uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AO4803A is Pb-free (meets ROHS & Sony 259 specifications) Features VDS (V) = -30V ID = -5 A (VGS = -10V) RDS(ON) < 46mΩ (VGS = -10V) RDS(ON) < 74mΩ (VGS = -4.5V) UIS TESTED! Rg,Ciss,Coss,Crss Tested! SOIC-8 Top View S2 G2 S1 G1 1 2 3 4 8 7 6 5 D2 D2 D1 D1 D1 D2 G1 S1 G2 S2 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current AF Pulsed Drain Current Power Dissipation Avalanche Current B B Maximum -30 ±20 -5 -4 -30 2 1.3 11 18 -55 to 150 Units V V A TA=25°C TA=70°C TA=25°C TA=70°C B ID IDM PD IAR EAR TJ, TSTG W A mJ °C Repetitive avalanche energy 0.3mH Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL Typ 48 74 35 Max 62.5 110 40 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO4803A Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions ID=-250µA, VGS=0V VDS=-30V, VGS=0V TJ=55°C VDS=0V, VGS=±20V VDS=VGS ID=-250µA VGS=-10V, VDS=-5V VGS=-10V, ID=5.0A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=-4.5V, ID=-4A Forward Transconductance VDS=-5V, ID=-5A Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current TJ=125°C -1.5 -30 37 52 60 11 -0.77 -1 -2 668 VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 126 92 6 12.7 VGS=-10V, VDS=-15V, ID=-5A 6.4 2 4 7.7 VGS=-10V, VDS=-15V, RL=3Ω, RGEN=3Ω IF=-5A, dI/dt=100A/µs 6.8 20 10 22 15 30 9 16 830 46 68 74 -2 Min -30 -1 -5 ±100 -2.5 Typ Max Units V µA nA V A mΩ mΩ S V A pF pF pF Ω nC nC nC nC ns ns ns ns ns nC STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg (10V) Total Gate Charge (10V) Qg (4.5V) Total Gate Charge (4.5V) Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=-5A, dI/dt=100A/µs A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using