AO4805
30V
Dual P-Channel MOSFET
General Description
Product Summary
The AO4805 combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low RDS(ON). This device is ideal for load switch
and battery protection applications.
ID (at VGS=-20V)
VDS
-30V
-9A
RDS(ON) (at VGS=-20V)
< 15mΩ
RDS(ON) (at VGS =-10V)
< 18mΩ
100% UIS Tested
100% Rg Tested
SOIC-8
Top View
D2
D1
Bottom View
Top View
S2
G2
S1
G1
1
2
3
4
8
7
6
5
D2
D2
D1
D1
G2
G1
S2
S1
Pin1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TA=25°C
Continuous Drain
Current
Pulsed Drain Current
C
Units
V
±25
V
-9
ID
TA=70°C
Maximum
-30
-7
A
IDM
-50
Avalanche Current C
IAS, IAR
33
A
Avalanche energy L=0.1mH C
TA=25°C
EAS, EAR
54
mJ
Power Dissipation B
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
Rev 7: December 2010
2
PD
TA=70°C
TJ, TSTG
Symbol
t ≤ 10s
Steady-State
Steady-State
W
1.3
RθJA
RθJL
www.aosmd.com
-55 to 150
Typ
48
74
32
°C
Max
62.5
90
40
Units
°C/W
°C/W
°C/W
Page 1 of 5
AO4805
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=-250µA, VGS=0V
-30
Typ
Max
V
VDS=-30V, VGS=0V
-1
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=-250µA
-1.7
ID(ON)
On state drain current
VGS=-10V, VDS=-5V
-50
TJ=55°C
-5
VDS=0V, VGS=±25V
±100
VGS=-20V, ID=-9A
-2.3
-2.8
µA
nA
V
A
10
VGS=-10V, ID=-8A
Units
15
12
18
13
20
mΩ
RDS(ON)
Static Drain-Source On-Resistance
VGS=-4.5V, ID=-5A
29
mΩ
gFS
Forward Transconductance
VDS=-5V, ID=-9A
27
S
VSD
Diode Forward Voltage
IS=-1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
TJ=125°C
-0.7
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
2060
VGS=0V, VDS=-15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg
Total Gate Charge
Qgs
Gate Source Charge
VGS=-10V, VDS=-15V, ID=-9A
1.2
mΩ
-1
V
-2.5
A
2600
pF
370
pF
295
pF
2.4
3.6
30
39
Ω
nC
4.6
nC
Qgd
Gate Drain Charge
10
nC
tD(on)
Turn-On DelayTime
11
ns
tr
Turn-On Rise Time
9.4
ns
tD(off)
Turn-Off DelayTime
24
ns
tf
Turn-Off Fall Time
12
ns
trr
Qrr
VGS=-10V, VDS=-15V, RL=1.67Ω,
RGEN=3Ω
IF=-9A, dI/dt=100A/µs
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=-9A, dI/dt=100A/µs
30
40
22
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using
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