AO4805L_101

AO4805 30V Dual P-Channel MOSFET General Description Product Summary The AO4805 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications. ID (at VGS=-20V) VDS -30V -9A RDS(ON) (at VGS=-20V) < 15mΩ RDS(ON) (at VGS =-10V) < 18mΩ 100% UIS Tested 100% Rg Tested SOIC-8 Top View D2 D1 Bottom View Top View S2 G2 S1 G1 1 2 3 4 8 7 6 5 D2 D2 D1 D1 G2 G1 S2 S1 Pin1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TA=25°C Continuous Drain Current Pulsed Drain Current C Units V ±25 V -9 ID TA=70°C Maximum -30 -7 A IDM -50 Avalanche Current C IAS, IAR 33 A Avalanche energy L=0.1mH C TA=25°C EAS, EAR 54 mJ Power Dissipation B Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead Rev 7: December 2010 2 PD TA=70°C TJ, TSTG Symbol t ≤ 10s Steady-State Steady-State W 1.3 RθJA RθJL www.aosmd.com -55 to 150 Typ 48 74 32 °C Max 62.5 90 40 Units °C/W °C/W °C/W Page 1 of 5 AO4805 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=-250µA, VGS=0V -30 Typ Max V VDS=-30V, VGS=0V -1 IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VGS(th) Gate Threshold Voltage VDS=VGS ID=-250µA -1.7 ID(ON) On state drain current VGS=-10V, VDS=-5V -50 TJ=55°C -5 VDS=0V, VGS=±25V ±100 VGS=-20V, ID=-9A -2.3 -2.8 µA nA V A 10 VGS=-10V, ID=-8A Units 15 12 18 13 20 mΩ RDS(ON) Static Drain-Source On-Resistance VGS=-4.5V, ID=-5A 29 mΩ gFS Forward Transconductance VDS=-5V, ID=-9A 27 S VSD Diode Forward Voltage IS=-1A,VGS=0V IS Maximum Body-Diode Continuous Current TJ=125°C -0.7 DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance 2060 VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge VGS=-10V, VDS=-15V, ID=-9A 1.2 mΩ -1 V -2.5 A 2600 pF 370 pF 295 pF 2.4 3.6 30 39 Ω nC 4.6 nC Qgd Gate Drain Charge 10 nC tD(on) Turn-On DelayTime 11 ns tr Turn-On Rise Time 9.4 ns tD(off) Turn-Off DelayTime 24 ns tf Turn-Off Fall Time 12 ns trr Qrr VGS=-10V, VDS=-15V, RL=1.67Ω, RGEN=3Ω IF=-9A, dI/dt=100A/µs Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=-9A, dI/dt=100A/µs 30 40 22 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using