AO4806

AO4806 20V Dual N-Channel MOSFET General Description Product Summary The AO4806 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. They offer operation over a wide gate drive range from 1.8V to 12V. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load switch, facilitated by its common-drain configuration. VDS (V) = 20V ID = 9.4A (VGS = 10V) RDS(ON) < 14mΩ (VGS = 10V) RDS(ON) < 15mΩ (VGS = 4.5V) RDS(ON) < 21mΩ (VGS = 2.5V) RDS(ON) < 30mΩ (VGS = 1.8V) ESD Rating: 2000V HBM 100% UIS Tested 100% Rg Tested SOIC-8 Top View D1 Bottom View D2 Top View S2 G2 S1 G1 1 2 3 4 8 7 6 5 D2 D2 D1 D1 G1 G2 S1 S2 Pin1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current A VGS TA=25°C TA=70°C TA=25°C Junction and Storage Temperature Range Maximum Junction-to-Lead C ±12 V ID 7.5 IDM 40 -55 to 150 Symbol Alpha & Omega Semiconductor, Ltd. W 1.28 TJ, TSTG t ≤ 10s Steady-State Steady-State A 2 PD TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Units V 9.4 Pulsed Drain Current B Power Dissipation Maximum 20 RθJA RθJL Typ 45 72 34 °C Max 62.5 110 40 Units °C/W °C/W °C/W AO4806 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V 10 IGSS Gate-Source leakage current VDS=0V, VGS=±10V BVGSO Gate-Source Breakdown Voltage VDS=0V, IG=±250uA ±12 VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 0.5 ID(ON) On state drain current VGS=4.5V, VDS=5V 30 TJ=55°C 25 ±10 V 11 14 14.3 17 VGS=4.5V, ID=8A 12.6 16 mΩ VGS=2.5V, ID=6A 16.5 22 mΩ 30 mΩ VGS=1.8V, ID=4A 23.4 VDS=5V, ID=9.4A 37 VSD Diode Forward Voltage IS=1A IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=10V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg Total Gate Charge VGS=4.5V, VDS=10V, ID=9.4A V A Forward Transconductance Output Capacitance µA 1 TJ=125°C Coss µA 0.75 VGS=10V, ID=9.4A gFS Units V VDS=16V, VGS=0V Zero Gate Voltage Drain Current Static Drain-Source On-Resistance Max 20 IDSS RDS(ON) Typ 0.72 mΩ S 1 V 3 A 1810 pF 232 pF 200 pF 1.6 Ω 17.9 nC 1.5 nC Qgs Gate Source Charge Qgd Gate Drain Charge 4.7 nC tD(on) Turn-On DelayTime 3.3 ns tr Turn-On Rise Time 5.9 ns tD(off) Turn-Off DelayTime 44 ns tf trr Turn-Off Fall Time 7.7 ns IF=9.4A, dI/dt=100A/µs 22 Qrr Body Diode Reverse Recovery Charge IF=9.4A, dI/dt=100A/µs 8.6 ns nC Body Diode Reverse Recovery Time VGS=10V, VDS=10V, RL=1.1Ω, RGEN=3Ω A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max. 2 E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. Rev4: Nov. 2010 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AO4806 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 40 20 10V 4.5V 2.5V 2V 12 ID(A) ID (A) VDS=5V 16 30 20 8 10 125°C 4 VGS=1.5V 25°C 0 0 0 1 2 3 4 5 0 0.5 1.5 2 2.5 VGS(Volts) Figure 2: Transfer Characteristics VDS (Volts) Fig 1: On-Region Characteristics 40 3 Normalized On-Resistance 1.6 VGS=1.8V 30 RDS(ON) (mΩ ) 1 VGS=2.5V 20 VGS=4.5V 10 VGS=10V 0 VGS=2.5V,6A VGS=4.5V, 8A 1.4 VGS=1.8V, 4A 1.2 VGS=10V, 9.4A 1 0.8 0 5 10 15 20 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 40 1.0E+01 1.0E+00 125°C ID=6A 1.0E-01 IS (A) RDS(ON) (mΩ ) 30 125°C 20 1.0E-02 25°C 1.0E-03 25°C 10 1.0E-04 0 1.0E-05 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics 1.2 AO4806 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 2800 5 VDS=10V ID=9.4A 2400 Capacitance (pF) VGS (Volts) 4 3 2 2000 Ciss 1600 1200 800 Coss 1 Crss 400 0 0 0 4 8 12 16 20 0 5 Qg (nC) Figure 7: Gate-Charge Characteristics 10 100.0 TJ(Max)=150°C TA=25°C RDS(ON) limited 100µs 30 Power (W) ID (Amps) 1ms 10ms 0.1s 1.0 20 1s TJ(Max)=150°C TA=25°C 10 10s DC 0 0.001 0.1 0.1 1 10 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 100 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 Zθ JA Normalized Transient Thermal Resistance 20 40 10µs 10.0 15 VDS (Volts) Figure 8: Capacitance Characteristics D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=62.5°C/W 0.01 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 100 1000