AO4806L

AO4806 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4806 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. They offer operation over a wide gate drive range from 1.8V to 12V. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load switch, facilitated by its common-drain configuration. Standard Product AO4806 is Pb-free (meets ROHS & Sony 259 specifications). AO4806L is a Green Product ordering option. AO4806 and AO4806L are electrically identical. VDS (V) = 20V ID = 9.4A (VGS = 10V) RDS(ON) < 14mΩ (VGS = 10V) RDS(ON) < 15mΩ (VGS = 4.5V) RDS(ON) < 21mΩ (VGS = 2.5V) RDS(ON) < 30mΩ (VGS = 1.8V) ESD Rating: 2000V HBM D2 D1 S2 G2 S1 G1 1 2 3 4 8 7 6 5 D2 D2 D1 D1 G1 G2 S1 SOIC-8 S2 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage VGS ±12 V ID 7.5 IDM 40 9.4 TA=70°C B TA=25°C Power Dissipation Units V TA=25°C Continuous Drain Current A Pulsed Drain Current Maximum 20 Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Alpha & Omega Semiconductor, Ltd. 2 PD TA=70°C W 1.28 TJ, TSTG -55 to 150 Symbol t ≤ 10s Steady-State Steady-State A RθJA RθJL Typ 45 72 34 °C Max 62.5 110 40 Units °C/W °C/W °C/W AO4806 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Source leakage current Conditions Min ID=250µA, VGS=0V 20 10 TJ=55°C 25 VDS=0V, VGS=±10V ±10 BVGSO Gate-Source Breakdown Voltage VDS=0V, IG=±250uA ±12 Gate Threshold Voltage VDS=VGS ID=250µA 0.5 ID(ON) On state drain current VGS=4.5V, VDS=5V 30 VGS=10V, ID=9.4A TJ=125°C Static Drain-Source On-Resistance VGS=4.5V, ID=8A Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time 1 V A 11 14 14.3 17 12.6 16 mΩ mΩ 22 23.4 30 mΩ VDS=5V, ID=9.4A 37 DYNAMIC PARAMETERS Ciss Input Capacitance Rg V 0.75 16.5 Diode Forward Voltage IS=1A Maximum Body-Diode Continuous Current Crss µA VGS=1.8V, ID=4A Forward Transconductance Output Capacitance µA VGS=2.5V, ID=6A gFS Coss Units mΩ VSD IS Max V VDS=16V, VGS=0V VGS(th) RDS(ON) Typ VGS=0V, VDS=10V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=4.5V, VDS=10V, ID=9.4A VGS=10V, VDS=10V, RL=1.1Ω, RGEN=3Ω 0.72 S 1 V 3 A 1810 pF 232 pF 200 pF 1.6 Ω 17.9 nC 1.5 nC 4.7 nC 3.3 ns 5.9 ns 44 ns 7.7 ns trr Body Diode Reverse Recovery Time IF=9.4A, dI/dt=100A/µs 22 Qrr Body Diode Reverse Recovery Charge IF=9.4A, dI/dt=100A/µs 8.6 ns nC 2 A: The value of R θJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max. 2 E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. Rev 3 : Sept 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AO4806 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 40 10V 20 4.5V 2V 2.5V 12 ID(A) ID (A) VDS=5V 16 30 20 8 10 125°C 4 VGS=1.5V 25°C 0 0 0 1 2 3 4 5 0 0.5 1.5 2 2.5 VGS(Volts) Figure 2: Transfer Characteristics VDS (Volts) Fig 1: On-Region Characteristics 40 Normalized On-Resistance RDS(ON) (mΩ) 3 1.6 VGS=1.8V 30 VGS=2.5V 20 VGS=4.5V 10 VGS=10V 0 VGS=2.5V,6A VGS=4.5V, 8A 1.4 VGS=1.8V, 4A 1.2 VGS=10V, 9.4A 1 0.8 0 5 10 15 20 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 40 1.0E+00 30 125°C ID=6A 1.0E-01 IS (A) RDS(ON) (mΩ) 1 125°C 20 25°C 1.0E-03 25°C 10 1.0E-02 1.0E-04 0 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics 1.2 AO4806 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 2800 5 VDS=10V ID=9.4A 2400 Capacitance (pF) VGS (Volts) 4 3 2 2000 Ciss 1600 1200 800 Coss 1 Crss 400 0 0 0 4 8 12 16 20 0 5 Qg (nC) Figure 7: Gate-Charge Characteristics 10 100.0 40 100µs 30 1ms Power (W) ID (Amps) RDS(ON) limited 10ms 0.1s 1.0 1s TJ(Max)=150°C TA=25°C DC 1 0 0.001 10 100 VDS (Volts) ZθJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=62.5°C/W 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 20 10 10s 0.1 0.1 20 TJ(Max)=150°C TA=25°C 10µs 10.0 15 VDS (Volts) Figure 8: Capacitance Characteristics In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 100 1000