AO4812_101

AO4812 30V Dual N-Channel MOSFET General Description Product Summary The AO4812 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in buck converters. ID (at VGS=10V) VDS 30V 6A RDS(ON) (at VGS=10V) < 30mΩ RDS(ON) (at VGS =4.5V) < 42mΩ 100% UIS Tested 100% Rg Tested SOIC-8 Top View D1 Bottom View D2 Top View S2 G2 S1 G1 D2 D2 D1 D1 G1 G2 S1 S2 Pin1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TA=25°C Continuous Drain Current Pulsed Drain Current C Units V ±20 V 6 ID TA=70°C Maximum 30 5 A IDM 30 Avalanche Current C IAS, IAR 10 A Avalanche energy L=0.1mH C TA=25°C EAS, EAR 5 mJ Power Dissipation B Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead Rev 9: February 2011 2 PD TA=70°C TJ, TSTG Symbol t ≤ 10s Steady-State Steady-State W 1.3 RθJA RθJL www.aosmd.com -55 to 150 Typ 48 74 32 °C Max 62.5 90 40 Units °C/W °C/W °C/W Page 1 of 5 AO4812 Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS Zero Gate Voltage Drain Current Conditions Min ID=-250µA, VGS=0V TJ=55°C Gate-Body leakage current VDS=0V, VGS=±20V VDS=VGS ID=250µA 1.2 ID(ON) On state drain current VGS=10V, VDS=5V 30 ±100 nA 1.8 2.4 V 25 30 40 48 VGS=4.5V, ID=5A 33 42 mΩ 1 V 2.5 A 310 pF VGS=10V, ID=6A Static Drain-Source On-Resistance TJ=125°C A gFS Forward Transconductance VDS=5V, ID=6A 15 VSD Diode Forward Voltage IS=1A,VGS=0V 0.76 IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance µA 5 Gate Threshold Voltage Units V 1 VGS(th) Coss Max 30 VDS=30V, VGS=0V IGSS RDS(ON) Typ 255 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz S 45 1.6 mΩ pF 35 50 pF 3.25 4.9 Ω SWITCHING PARAMETERS Total Gate Charge Qg(10V) 5.2 6.3 nC Qg(4.5V) 2.55 3.2 nC Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime VGS=10V, VDS=15V, ID=6A VGS=10V, VDS=15V, RL=2.5Ω, RGEN=3Ω 0.85 nC 1.3 nC 4.5 ns 2.5 ns 14.5 ns tf Turn-Off Fall Time 3.5 ns trr Body Diode Reverse Recovery Time IF=6A, dI/dt=100A/µs 8.5 Qrr Body Diode Reverse Recovery Charge IF=6A, dI/dt=100A/µs 2.2 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using