AO4813_002

AO4813 30V Dual P-Channel MOSFET General Description Product Summary The AO4813 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications. ID (at VGS=-10V) -30V -7.1A RDS(ON) (at VGS=-10V) < 25mΩ RDS(ON) (at VGS = -4.5V) < 40mΩ VDS 100% UIS Tested 100% Rg Tested SOIC-8 Top View D D Bottom View Top View S2 G2 S1 G1 1 2 3 4 8 7 6 5 D2 D2 D1 D1 G G S S Pin1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage VGS TA=25°C Continuous Drain Current Pulsed Drain Current C Units V ±20 V -7.1 ID TA=70°C Maximum -30 A -5.6 IDM -40 Avalanche Current C IAS, IAR -27 A Avalanche energy L=0.1mH C TA=25°C EAS, EAR 36 mJ Power Dissipation B Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead Rev 9: April 2011 2 PD TA=70°C Steady-State Steady-State -55 to 150 TJ, TSTG Symbol t ≤ 10s W 1.3 RθJA RθJL www.aosmd.com Typ 48 74 32 °C Max 62.5 90 40 Units °C/W °C/W °C/W Page 1 of 6 AO4813 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=-250µA, VGS=0V -30 -1 Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VGS(th) Gate Threshold Voltage VDS=VGS ID=-250µA -1.5 ID(ON) On state drain current VGS=-10V, VDS=-5V -40 TJ=55°C -5 VDS=0V, VGS= ±20V ±100 VGS=-10V, ID=-7.1A 33 VGS=-4.5V, ID=-5.6A 27 40 VDS=-5V, ID=-7.1A 24 Forward Transconductance VSD Diode Forward Voltage IS=-1A,VGS=0V IS Maximum Body-Diode Continuous Current TJ=125°C -0.75 DYNAMIC PARAMETERS Ciss Input Capacitance Rg Gate resistance 1040 VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz µA nA V mΩ mΩ S -1 V -2.5 A 1250 pF 180 2 Units A 24 gFS Output Capacitance -2.5 25 Static Drain-Source On-Resistance Reverse Transfer Capacitance -2.0 17 RDS(ON) Crss Max V VDS=-30V, VGS=0V IDSS Coss Typ pF 125 175 pF 4 6 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 19 nC Qg(4.5V) Total Gate Charge 9.6 nC 3.6 nC VGS=-10V, VDS=-15V, ID=-7.1A Qgs Gate Source Charge Qgd Gate Drain Charge 4.6 nC tD(on) Turn-On DelayTime 10 ns tr Turn-On Rise Time 5.5 ns VGS=-10V, VDS=-15V, RL=2.2Ω, RGEN=3Ω tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge IF=-7.1A, dI/dt=500A/µs IF=-7.1A, dI/dt=500A/µs 26 ns 9 ns 11.5 ns nC 25 A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using