AO4828

AO4828 60V Dual N-Channel MOSFET General Description Features The AO4828 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. VDS (V) = 60V ID = 4.5A (VGS = 10V) RDS(ON) < 56mΩ (VGS = 10V) RDS(ON) < 77mΩ (VGS = 4.5V) 100% UIS tested 100% Rg tested SOIC-8 Top View D 1 Bottom View D 2 Top View S2 G2 S1 G1 D2 D2 D1 D1 G1 G2 S1 S2 Pin1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain AF Current VGS TA=25°C TA=70°C TA=25°C Avalanche Current B B Junction and Storage Temperature Range Thermal Characteristics Parameter A Maximum Junction-to-Ambient Maximum Junction-to-Ambient A Maximum Junction-to-Lead C ±20 V ID 3.6 IDM 20 W 1.28 IAR, IAS 19 A EAR, EAS 18 mJ TJ, TSTG -55 to 150 °C Symbol t ≤ 10s Steady-State Steady-State Alpha & Omega Semiconductor, Ltd. A 2 PD TA=70°C Repetitive avalanche energy 0.1mH Units V 4.5 Pulsed Drain Current B Power Dissipation Maximum 60 RθJA RθJL Typ 48 74 35 Max 62.5 110 60 Units °C/W °C/W °C/W www.aosmd.com AO4828 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V Units V 1 Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS= ±20V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1 ID(ON) On state drain current VGS=10V, VDS=5V 20 TJ=55°C µA 5 VGS=10V, ID=4.5A Static Drain-Source On-Resistance Max 60 VDS=60V, VGS=0V IDSS RDS(ON) Typ TJ=125°C VGS=4.5V, ID=3A 100 nA 2.1 3 V 46 56 80 100 64 77 mΩ 1 V A mΩ gFS Forward Transconductance VDS=5V, ID=4.5A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current 3 A ISM Pulsed Body Diode Current B 20 A 11 0.74 DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance 450 VGS=0V, VDS=30V, f=1MHz Qgs Gate Source Charge 540 60 VGS=10V, VDS=30V, ID=4.5A 1.3 pF pF 25 VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge S pF 1.65 2 Ω 8.5 10.5 nC 4.3 5.5 nC 1.6 nC Qgd Gate Drain Charge 2.2 nC tD(on) Turn-On DelayTime 4.7 ns tr Turn-On Rise Time 2.3 ns VGS=10V, VDS=30V, RL=6.7Ω, RGEN=3Ω tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Qrr Body Diode Reverse Recovery Charge IF=4.5A, dI/dt=100A/µs Body Diode Reverse Recovery Time IF=4.5A, dI/dt=100A/µs 15.7 ns 1.9 ns 27.5 35 32 ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using