AO4830

AO4830 80V Dual N-Channel MOSFET General Description Product Summary The AO4830 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . This device is suitable for use as a load switch or in PWM applications. VDS (V) = 80V ID = 3.5A RDS(ON) < 75mΩ (VGS = 10V) (VGS = 10V) 100% UIS Tested 100% Rg Tested SOIC-8 Top View Bottom View D1 D2 Top View S2 G2 S1 G1 D2 D2 D1 D1 G1 S1 Pin1 Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current G2 VGS TA=25°C TA=70°C Avalanche Current C Repetitive avalanche energy L=0.1mH TA=25°C B Power Dissipation TA=70°C C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead Alpha & Omega Semiconductor, Ltd. Units V ±30 V A 2.9 IDM 18 IAR 16 A EAR 12.8 mJ 2 PD Junction and Storage Temperature Range Maximum 80 3.5 ID Pulsed Drain Current C S2 TJ, TSTG -55 to 150 Symbol t ≤ 10s Steady-State Steady-State W 1.3 RθJA RθJL Typ 48 74 32 °C Max 62.5 90 40 Units °C/W °C/W °C/W www.aosmd.com AO4830 Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol Conditions STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Min ID=250µA, VGS=0V V IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS= ±30V Gate Threshold Voltage On state drain current VDS=VGS ID=250µA 3.5 VGS=10V, VDS=5V 18 TJ=55°C gFS Forward Transconductance VDS=5V, ID=3.5A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current TJ=125°C 100 nA 4.2 5 V 62 75 113.0 135 A ISM 0.77 Pulsed Body-diode Current Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=40V, f=1MHz VGS=0V, VDS=0V, f=1MHz S 1 V 2.5 A 18 A 510 640 770 pF 28 40 52 pF 12 20 30 pF 0.9 1.8 2.7 Ω nC SWITCHING PARAMETERS Qg(10V) Total Gate Charge 8 11 13 Qg(4.5V) Total Gate Charge 4 5.5 7 Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Qrr VGS=10V, VDS=40V, ID=3.5A 4 5 6 nC 0.7 1.2 1.7 nC VGS=10V, VDS=40V, RL=8Ω, RGEN=3Ω IF=3.5A, dI/dt=300A/µs Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=3.5A, dI/dt=300A/µs mΩ 15 C DYNAMIC PARAMETERS Ciss Input Capacitance µA 5 VGS=10V, ID=3.5A Static Drain-Source On-Resistance Units 1 Zero Gate Voltage Drain Current RDS(ON) Max 80 VDS=80V, VGS=0V IDSS ID(ON) Typ 7.2 ns 2.2 ns 17 ns 2 ns 14 20 26 35 50 65 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using