AO4830L

AO4830L Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4830L uses advanced trench technology to provide excellent RDS(ON) and low gate charge . This device is suitable for use as a load switch or in PWM applications. VDS (V) = 80V ID = 3.5A (VGS = 10V) RDS(ON) < 75mΩ (VGS = 10V) 100% UIS Tested! 100% R g Tested! - RoHS Compliant - Halogen Free D1 SOIC-8 D2 SOIC-8 D S2 G2 S1 G1 1 2 3 4 8 7 6 5 D2 D2 D1 D1 TA=25°C Continuous Drain Current C Repetitive avalanche energy L=0.1mH C TA=25°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead Alpha & Omega Semiconductor, Ltd. Maximum 80 Units V ±30 V A 2.9 IDM 18 IAR 16 A EAR 12.8 mJ 2 PD TA=70°C S2 3.5 ID TA=70°C Avalanche Current C Power Dissipation B G2 S1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage V Gate-Source Voltage GS Pulsed Drain Current G1 G S TJ, TSTG -55 to 150 Symbol t ≤ 10s Steady-State Steady-State W 1.3 RθJA RθJL Typ 48 74 32 °C Max 62.5 90 40 Units °C/W °C/W °C/W www.aosmd.com AO4830L Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V VDS=80V, VGS=0V IGSS Gate-Body leakage current VDS=0V, VGS= ±30V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 3.5 ID(ON) On state drain current VGS=10V, VDS=5V 18 RDS(ON) Static Drain-Source On-Resistance gFS Forward Transconductance VSD IS Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current ISM Pulsed Body-diode CurrentC TJ=55°C TJ=125°C VDS=5V, ID=3.5A DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge 5 VGS=10V, ID=3.5A VGS=0V, VDS=40V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=40V, ID=3.5A Units V 1 Zero Gate Voltage Drain Current Crss Max 80 IDSS Coss Typ 4.2 µA 100 nA 5 V A 62 75 113.0 135 15 0.77 mΩ S 1 V 2.5 A 18 A 510 640 770 pF 28 40 52 pF 12 20 30 pF 0.9 1.8 2.7 Ω 8 11 13 nC 4 5.5 7 4 5 6 nC 0.7 1.2 1.7 nC Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=3.5A, dI/dt=300A/µs 14 20 26 Qrr Body Diode Reverse Recovery Charge IF=3.5A, dI/dt=300A/µs 35 50 65 VGS=10V, VDS=40V, RL=8Ω, RGEN=3Ω 7.2 ns 2.2 ns 17 ns 2 ns ns nC 2 A. The value of R θJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation P D is based on T J(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature T J(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using