AO4884

AO4884 40V Dual N-Channel MOSFET General Description Product Summary The AO4884 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This is an all purpose device that is suitable for use in a wide range of power conversion applications. ID (at VGS=10V) VDS 40V 10A RDS(ON) (at VGS=10V) < 13mΩ RDS(ON) (at VGS = 4.5V) < 16mΩ 100% UIS Tested 100% Rg Tested SOIC-8 Top View D1 D2 Bottom View Top View S2 G2 S1 G1 1 2 3 4 D2 D2 D1 D1 8 7 6 5 G1 G2 S1 S2 Pin1 Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current VGS TA=25°C Units V ±20 V 10 ID TA=70°C Maximum 40 8 A Pulsed Drain Current C IDM 50 Avalanche Current C IAS, IAR 35 A Avalanche energy L=0.1mH C TA=25°C EAS, EAR 61 mJ Power Dissipation B Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead Rev 1: Nov 2010 2 PD TA=70°C TJ, TSTG Symbol t ≤ 10s Steady-State Steady-State W 1.3 RθJA RθJL www.aosmd.com -55 to 150 Typ 48 74 32 °C Max 62.5 90 40 Units °C/W °C/W °C/W Page 1 of 6 AO4884 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Min Conditions ID=250µA, VGS=0V Typ 40 1 Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1.55 ID(ON) On state drain current VGS=10V, VDS=5V 50 TJ=55°C VDS=0V, VGS= ±20V ±100 nA 2.2 2.7 V 11 13 16.5 20 12.7 16 A RDS(ON) Static Drain-Source On-Resistance gFS Forward Transconductance VDS=5V, ID=10A 50 VSD Diode Forward Voltage IS=1A,VGS=0V 0.7 IS Maximum Body-Diode Continuous Current TJ=125°C VGS=4.5V, ID=10A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Reverse Transfer Capacitance Rg Gate resistance 1200 VGS=0V, VDS=20V, f=1MHz µA 5 VGS=10V, ID=10A Units V VDS=40V, VGS=0V IDSS Crss Max 1500 mΩ mΩ S 1 V 2.5 A 1950 pF 150 215 280 pF 80 135 190 pF 1.7 3.5 5.3 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 22 27.2 33 nC Qg(4.5V) Total Gate Charge 10 13.6 16 nC 3.6 4.5 5.4 nC 6.4 9 nC Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Qrr VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=20V, ID=10A 3.8 VGS=10V, VDS=20V, RL=2Ω, RGEN=3Ω IF=10A, dI/dt=500A/µs Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=10A, dI/dt=500A/µs 6.4 ns 17.2 ns 29.6 ns 16.8 ns 9 13 17 25 35 45 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using