AO4922 Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor
SRFET
TM
Features FET1 VDS (V) = 30V ID = 9A RDS(ON) < 15.8mΩ RDS(ON) < 18.5mΩ
General Description
The AO4922 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DCDC converters. A monolithically integrated Schottky diode in parallel with the synchronous MOSFET to boost efficiency further. Standard Product AO4922 is Pb-free (meets ROHS & Sony 259 specifications). AO4922L is a Green Product ordering option. AO4922L and AO4922 are electrically identical. SOIC-8
FET2 V DS(V) = 30V I D=7.3A (VGS = 10V)
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