AO4924L

AO4924 Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features The AO4924 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DC-DC converters. A monolithically integrated Schottky diode in parallel with the synchronous MOSFET to boost efficiency further. Standard Product AO4924 is Pb-free (meets ROHS & Sony 259 specifications). AO4924L is a Green Product ordering option. AO4924L and AO4924 are electrically identical. FET1 VDS (V) = 30V ID = 9A RDS(ON) < 15.8mΩ RDS(ON) < 19.5mΩ SOIC-8 S1 G1 S2 G2 1 2 3 4 8 7 6 5 UIS TESTED! Rg,Ciss,Coss,Crss Tested SRFET TM Soft Recovery MOSFET: Integrated Schottky Diode D1 D1 D2 D2 Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Max FET1 Parameter VDS 30 Drain-Source Voltage VGS Gate-Source Voltage ±12 Continuous Drain Current A TA=70°C B Repetitive avalanche energy L=0.3mH B TA=25°C Power Dissipation Junction and Storage Temperature Range ±12 V 7.3 7.2 5.9 40 40 IAR 16 12 A mJ EAR TJ, TSTG Thermal Characteristics FET1 Parameter A Maximum Junction-to-Ambient Maximum Junction-to-Ambient A C Maximum Junction-to-Lead t ≤ 10s Steady-State Steady-State 38 22 2.0 2.0 1.3 1.3 -55 to 150 -55 to 150 Thermal Characteristics FET2 Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C t ≤ 10s Steady-State Steady-State Symbol RθJA RθJL Symbol Alpha & Omega Semiconductor, Ltd. Units V 9.0 PDSM TA=70°C Max FET2 30 IDSM IDM TA=25°C Pulsed Drain Current B Avalanche Current FET2 V DS(V) = 30V I D=7.3A (V GS = 10V)