AO6401

AO6401 30V P-Channel MOSFET General Description Product Summary The AO6401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. ID (at VGS=-10V) -30V -5A RDS(ON) (at VGS=-10V) < 47mΩ VDS RDS(ON) (at VGS =-4.5V) < 64mΩ RDS(ON) (at VGS=-2.5V) < 85mΩ TSOP6 Top View D Bottom View Top View D 1 6 D D 2 5 D G 3 4 S G S Pin1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS VGS Gate-Source Voltage TA=25°C Continuous Drain Current Pulsed Drain Current Power Dissipation Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead Rev 7: Mar 2011 Steady-State Steady-State A 2 W 1.3 TJ, TSTG Symbol t ≤ 10s V -28 PD TA=70°C ±12 -4 IDM TA=25°C B Units V -5 ID TA=70°C C Maximum -30 RθJA RθJL www.aosmd.com -55 to 150 Typ 47.5 74 37 °C Max 62.5 110 50 Units °C/W °C/W °C/W Page 1 of 5 AO6401 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS Zero Gate Voltage Drain Current Conditions Min ID=-250µA, VGS=0V -30 -1 TJ=55°C -5 Gate-Body leakage current VDS=0V, VGS=±12V VGS(th) Gate Threshold Voltage VDS=VGS ID=-250µA -0.5 ID(ON) On state drain current VGS=-10V, VDS=-5V -28 nA -1.3 V 39 47 60 74 VGS=-4.5V, ID=-4A 45 64 mΩ VGS=-2.5V, ID=-1A 59 85 mΩ 18 TJ=125°C Forward Transconductance VDS=-5V, ID=-5A VSD Diode Forward Voltage IS=-1A,VGS=0V IS Maximum Body-Diode Continuous Current Output Capacitance Reverse Transfer Capacitance Rg Gate resistance A -0.7 DYNAMIC PARAMETERS Ciss Input Capacitance Coss µA ±100 gFS Crss Units -0.9 VGS=-10V, ID=-5A Static Drain-Source On-Resistance Max V VDS=-30V, VGS=0V IGSS RDS(ON) Typ 645 VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz S -1 V -2.5 A 780 pF 80 4 mΩ pF 55 80 pF 7.8 12 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 14 17 nC Qg(4.5V) Total Gate Charge 7 8.5 nC Qgs Gate Source Charge VGS=-10V, VDS=-15V, ID=-5A 1.5 nC Qgd Gate Drain Charge 2.5 nC tD(on) Turn-On DelayTime 6.5 ns tr Turn-On Rise Time 3.5 ns VGS=-10V, VDS=-15V, RL=3Ω, RGEN=3Ω tD(off) Turn-Off DelayTime tf Turn-Off Fall Time 41 ns 9 ns trr Body Diode Reverse Recovery Time IF=-5A, dI/dt=100A/µs 11 Qrr Body Diode Reverse Recovery Charge IF=-5A, dI/dt=100A/µs 3.5 13.5 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using