AO6402A

AO6402A N-Channel Enhancement Mode Field Effect Transistor General Description The AO6402A/L uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow a Kelvin connection to the source, which may be used to bypass the source inductance. AO6402A and AO6402AL are electrically identical. -RoHS Compliant -AO6402AL is Halogen Free Features VDS (V) = 30V I D = 7A RDS(ON) < 27m Ω RDS(ON) < 40m Ω (V GS = 10V) (VGS = 10V) (VGS = 4.5V) TSOP-6 D Top View D D G 16 25 34 D D S G S Absolute Maximum Ratings T A=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current A,F Pulsed Drain Current Power Dissipation B Maximum 30 ±20 7.0 5.6 30 2.0 1.28 -55 to 150 Units V V A VGS TA=25°C TA=70°C TA=25°C TA=70°C ID IDM PD TJ, TSTG W °C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Lead C Symbol A A t ≤ 10s Steady-State Steady-State RθJA RθJL Typ 48 74 35 Max 62.5 110 40 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO6402A Electrical Characteristics (T J=25°C unless otherwise noted) Symbol Parameter Conditions ID=250µA, VGS=0V VDS=30V, VGS=0V TJ=55°C VDS=0V, VGS= ±20V VDS=VGS ID=250µA VGS=10V, VDS=5V VGS=10V, ID=7A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.5V, ID=5.6A Forward Transconductance Diode Forward Voltage VDS=5V, ID=7A IS=1A,VGS=0V TJ=125°C 1 30 22.5 32 32.5 20 0.75 1 2.5 621 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 118 85 0.8 11.3 VGS=10V, VDS=15V, ID=7A 5.7 2.1 3 4.5 VGS=10V, VDS=15V, RL=2.6Ω, RGEN=3Ω IF=7A, dI/dt=100A/µs 3.1 15.1 2.7 15.5 7.1 6.5 5 23 5 21 10 1.5 17 8 820 27 39 40 1.6 Min 30 1 5 100 2.5 Typ Max Units V µA nA V A mΩ mΩ S V A pF pF pF Ω nC nC nC nC ns ns ns ns ns nC STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=7A, dI/dt=100A/µs A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using