AO6409A

AO6409A 20V P-Channel MOSFET General Description Product Summary The AO6409A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch applications. VDS -20V ID (at VGS=-4.5V) -5.5A RDS(ON) (at VGS= -4.5V) < 41mW RDS(ON) (at VGS= -2.5V) < 53mW RDS(ON) (at VGS= -1.8V) < 65mW ESD protected TSOP6 Top View D Bottom View Top View D 1 6 D D 2 5 D G 3 4 S G S Pin1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TA=25°C Continuous Drain Current Pulsed Drain Current C Power Dissipation Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead Rev 4.0: January 2019 Steady-State Steady-State A 2.1 W 1.3 TJ, TSTG Symbol t ≤ 10s V -30 PD TA=70°C ±8 -4.2 IDM TA=25°C B Units V -5.5 ID TA=70°C Maximum -20 RqJA RqJL www.aosmd.com -55 to 150 Typ 48 75 37 °C Max 60 90 45 Units °C/W °C/W °C/W Page 1 of 5 AO6409A Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=-250mA, VGS=0V -20 -1 Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS= ±8V Gate Threshold Voltage On state drain current VDS=VGS, ID=-250mA -0.3 VGS=-4.5V, VDS=-5V -30 TJ=55°C -5 Static Drain-Source On-Resistance ±10 mA V 34 41 49 59 VGS=-2.5V, ID=-4A 42 53 mW VGS=-1.8V, ID=-2A 52 65 mW 20 TJ=125°C Forward Transconductance VDS=-5V, ID=-5.5A VSD Diode Forward Voltage IS=-1A,VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=-10V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg Total Gate Charge VGS=-4.5V, VDS=-10V, ID=-5.5A A -0.64 mW S -1 V -2 A 600 751 905 pF 80 115 150 pF 48 80 115 pF 6 13 20 W 7.4 9.3 11 nC 0.8 1 1.2 nC 1.3 2.2 3.1 nC Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time IF=-5.5A, dI/dt=500A/ms 20 26 32 Qrr Body Diode Reverse Recovery Charge IF=-5.5A, dI/dt=500A/ms 40 51 62 Body Diode Reverse Recovery Time mA -0.9 gFS Coss Units -0.57 VGS=-4.5V, ID=-5.5A RDS(ON) Max V VDS=-20V, VGS=0V IDSS ID(ON) Typ VGS=-4.5V, VDS=-10V, RL=1.8W, RGEN=3W 13 ns 9 ns 19 ns 29 ns ns nC A. The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RqJA is the sum of the thermal impedence from junction to lead RqJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using