AO6411

AO6411 20V P-Channel AlphaMOS General Description Product Summary • Trench Power AlphaMOS (αMOS LV) technology • Low RDS(ON) • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant VDS -20V -7A ID (at VGS=-4.5V) RDS(ON) (at VGS=-4.5V) < 28.5mΩ RDS(ON) (at VGS=-2.5V) < 36.5mΩ RDS(ON) (at VGS=-1.8V) < 47 mΩ Applications • Load switch • Battery protection TSOP6 Top View D Bottom View Top View D 1 6 D D 2 5 D G 3 4 S G S Pin1 Orderable Part Number Package Type Form Minimum Order Quantity AO6411 TSOP-6 Tape & Reel 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Symbol VDS Gate-Source Voltage VGS TA=25°C Continuous Drain Current Pulsed Drain Current Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead Rev.1.0: August 2015 Steady-State Steady-State A 2.7 W 1.7 TJ, TSTG Symbol t ≤ 10s V -28 PD TA=70°C ±8 -5.5 IDM TA=25°C Power Dissipation B Units V -7 ID TA=70°C C Maximum -20 RθJA RθJL -55 to 150 Typ 35 60 23 www.aosmd.com °C Max 45 75 30 Units °C/W °C/W °C/W Page 1 of 5 AO6411 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=-250µA, VGS=0V -20 Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS=±8V Gate Threshold Voltage VDS=VGS, ID=-250µA TJ=55°C ±100 nA -0.65 -0.9 V 23.5 28.5 34 41 VGS=-2.5V, ID=-3.5A 29 36.5 mΩ VGS=-1.8V, ID=-2.2A 36 47 mΩ -1 V -3.5 A -0.3 TJ=125°C gFS Forward Transconductance VDS=-5V, ID=-7A 23 Diode Forward Voltage IS=-1A, VGS=0V -0.62 IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Input Capacitance Ciss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=-10V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd tD(on) µA -5 VSD Coss Units -1 VGS=-4.5V, ID=-7A Static Drain-Source On-Resistance Max V VDS=-20V, VGS=0V IDSS RDS(ON) Typ S 1025 pF 167 pF 119 pF 11 Ω 13 VGS=-4.5V, VDS=-10V, ID=-7A mΩ 18 nC 2 nC Gate Drain Charge 3.4 nC Turn-On DelayTime 10 ns 15 ns 85 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Qrr VGS=-4.5V, VDS=-10V, RL=1.43Ω, RGEN=3Ω 40 ns IF=-7A, di/dt=500A/µs 30 Body Diode Reverse Recovery Charge IF=-7A, di/dt=500A/µs 80 ns nC Body Diode Reverse Recovery Time A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedance from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using