AO6415

AO6415 20V P-Channel MOSFET General Description Product Summary The AO6415 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. VDS -20V ID (at VGS=-10V) -3.3A RDS(ON) (at VGS= -10V) < 82mΩ RDS(ON) (at VGS= -4.5V) < 100mΩ RDS(ON) (at VGS= -2.5V) < 140mΩ Typical ESD protection HBM Class 2 TSOP6 Top View D Bottom View Top View D 1 6 D 2 5 D G 3 4 S D G S Pin1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current VGS TA=25°C Pulsed Drain Current C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead Rev 2: Jul 2011 Steady-State Steady-State A 1.25 W 0.8 TJ, TSTG Symbol t ≤ 10s V -17 PD TA=70°C ±12 -2.7 IDM TA=25°C Power Dissipation B Units V -3.3 ID TA=70°C Maximum -20 RθJA RθJL www.aosmd.com -55 to 150 Typ 82 111 56 °C Max 100 140 70 Units °C/W °C/W °C/W Page 1 of 5 AO6415 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS Zero Gate Voltage Drain Current Conditions Min ID=-250µA, VGS=0V -20 -1 TJ=55°C -5 ±10 µA V 68 82 95 115 VGS=-4.5V, ID=-2A 80 100 mΩ VGS=-2.5V, ID=-1A 107 140 mΩ 8.6 VDS=VGS, ID=-250µΑ -0.5 ID(ON) On state drain current VGS=-4.5V, VDS=-5V -17 VGS=-10V, ID=-3.3A TJ=125°C gFS Forward Transconductance VDS=-5V, ID=-3.3A VSD Diode Forward Voltage IS=-1A,VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Input Capacitance Ciss Coss Output Capacitance Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=-10V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr µA -1.2 VDS=0V, VGS= ±12V Gate Threshold Voltage Crss Units -0.85 Gate-Body leakage current VGS(th) Static Drain-Source On-Resistance Max V VDS=-20V, VGS=0V IGSS RDS(ON) Typ VGS=-4.5V, VDS=-10V, ID=-2A A -0.76 mΩ S -1 V -1.5 A 250 325 400 pF 40 63 85 pF 22 37 52 pF 11.2 17 Ω 3.2 4.5 nC 0.6 nC 0.9 nC 11 ns VGS=-4.5V, VDS=-10V, RL=5Ω, RGEN=3Ω 5.5 ns 22 ns 8 ns IF=-2A, dI/dt=100A/µs 6.1 Body Diode Reverse Recovery Charge IF=-2A, dI/dt=100A/µs 1.4 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedance from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using