AO6420

AO6420 60V N-Channel MOSFET General Description Product Summary The AO6420 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. VDS (V) = 60V ID = 4.2A (VGS = 10V) RDS(ON) < 60mΩ (VGS = 10V) RDS(ON) < 75mΩ (VGS = 4.5V) TSOP6 Top View D Bottom View Top View D 1 6 D D 2 5 D G 3 4 S G S Pin1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TA=25°C Continuous Drain Current A,F Pulsed Drain Current TA=70°C ID B V Junction and Storage Temperature Range 20 -55 to 150 Symbol Alpha & Omega Semiconductor, Ltd. W 1.28 TJ, TSTG t ≤ 10s Steady-State Steady-State A 2.00 PD TA=70°C Maximum Junction-to-Lead C ±20 3.4 IDM Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Units V 4.2 TA=25°C Power Dissipation Maximum 60 RθJA RθJL Typ 48 74 35 °C Max 62.5 110 40 Units °C/W °C/W °C/W www.aosmd.com AO6420 N Channel Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V 5 Gate-Body leakage current VDS=0V, VGS= ±20V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1 ID(ON) On state drain current VGS=10V, VDS=5V 20 VGS=10V, ID=4.2A TJ=125°C VGS=4.5V, ID=3A gFS Forward Transconductance VDS=5V, ID=4.2A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=0V, f=1MHz µA 100 nA 2.3 3 V 50 60 A 85 60 mΩ 75 mΩ 1 V 3 A 13 0.78 450 VGS=0V, VDS=30V, f=1MHz Units V 1 TJ=55°C Static Drain-Source On-Resistance Max 60 VDS=60V, VGS=0V IGSS RDS(ON) Typ S 540 pF 60 pF 25 pF Ω 1.65 2 SWITCHING PARAMETERS Qg(10V) Total Gate Charge 9.5 11.5 nC Qg(4.5V) Total Gate Charge 4.3 5.5 nC Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Qrr VGS=10V, VDS=30V, ID=4.2A VGS=10V, VDS=30V, RL=7Ω, RGEN=3Ω IF=4.2A, dI/dt=100A/µs Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=4.2A, dI/dt=100A/µs 1.6 nC 2.2 nC 5.1 7 ns 2.6 4 ns 15.9 20 ns 2 3 ns 25.1 35 ns nC 28.7 A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using