AO6601

AO6601 30V Complementary MOSFET General Description Product Summary The AO6601 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications. N-Channel VDS= 30V P-Channel -30V ID= 3.4A (VGS=10V) -2.3A (VGS=-10V) RDS(ON) RDS(ON) < 60mΩ (VGS=10V) < 115mΩ (VGS=-10V) < 70mΩ (VGS=4.5V) < 150mΩ (VGS=-4.5V) < 90mΩ (VGS=2.5V) < 200mΩ (VGS=-2.5V) TSOP6 Top View D1 Bottom View D2 Top View G1 1 6 D1 S2 2 5 S1 G2 3 4 D2 G1 G2 S1 Pin1 n-channel Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Max n-channel Drain-Source Voltage VDS 30 Gate-Source Voltage Continuous Drain Current VGS TA=25°C ID TA=70°C Pulsed Drain Current C IDM TA=25°C Power Dissipation B PD TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead Rev 6: Dec. 2012 Steady-State Steady-State Max p-channel -30 Units V ±12 ±12 V 3.4 -2.3 2.7 -1.8 20 -15 1.15 1.15 0.73 0.73 TJ, TSTG Symbol t ≤ 10s RθJA RθJL www.aosmd.com S2 p-channel -55 to 150 Typ 78 106 64 A W °C Max 110 150 80 Units °C/W °C/W °C/W Page 1 of 9 AO6601 N-Channel Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V Typ Max Units 30 V VDS=30V, VGS=0V 1 TJ=55°C µA 5 IGSS Gate-Body leakage current VDS=0V, VGS=±12V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 0.5 ID(ON) On state drain current VGS=10V, VDS=5V 20 ±100 nA 1 1.5 V 46 60 73 88 VGS=4.5V, ID=3A 50 70 mΩ 90 mΩ 1 V 1.5 A VGS=10V, ID=3.4A TJ=125°C A RDS(ON) Static Drain-Source On-Resistance VGS=2.5V, ID=2A 62 gFS Forward Transconductance VDS=5V, ID=3.4A 14 VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance 0.75 mΩ S 185 235 285 pF 25 35 45 pF 10 18 25 pF 0.9 1.8 2.7 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 10 12 nC Qg(4.5V) Total Gate Charge 4.7 6 nC Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Qgs Gate Source Charge VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=15V, ID=3.4A 0.95 nC nC Qgd Gate Drain Charge 1.6 tD(on) Turn-On DelayTime 3.5 ns tr Turn-On Rise Time 1.5 ns tD(off) Turn-Off DelayTime 17.5 ns tf trr Turn-Off Fall Time 2.5 ns Qrr VGS=10V, VDS=15V, RL=4.4Ω, RGEN=3Ω IF=3.4A, dI/dt=100A/µs Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=3.4A, dI/dt=100A/µs 8.5 12 2.55 4 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using