AO6602L

AO6602 30V Complementary MOSFET General Description Product Summary The AO6602 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications. N-Channel VDS= 30V P-Channel -30V ID= 3.5A (VGS=10V) -2.7A (VGS=-10V) RDS(ON) RDS(ON) < 50mΩ (VGS=10V) < 100mΩ (VGS=-10V) < 70mΩ (VGS=4.5V) < 170mΩ (VGS=-4.5V) D1 D2 TSOP6 Top View Top View Bottom View G1 1 S2 2 6 5 S1 G2 3 4 D2 D1 G1 S1 Pin1 n-channel Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter Max n-channel Drain-Source Voltage 30 VDS Gate-Source Voltage VGS TA=25°C Continuous Drain Current Pulsed Drain Current ID TA=70°C C IDM TA=25°C Power Dissipation B PD TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead Rev5: Mar 2011 G2 Steady-State Steady-State Max p-channel -30 Units V ±20 ±20 V 3.5 -2.7 3 -2.1 20 -15 1.15 1.15 0.73 0.73 -55 to 150 TJ, TSTG Symbol t ≤ 10s RθJA RθJL www.aosmd.com S2 p-channel Typ 78 106 64 A W °C Max 110 150 80 Units °C/W °C/W °C/W Page 1 of 9 AO6602 N-Channel Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS Conditions Min ID=250µA, VGS=0V IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS= ±20V Gate Threshold Voltage VDS=VGS ID=250µA 1.5 ID(ON) On state drain current VGS=10V, VDS=5V 20 TJ=125°C VGS=4.5V, ID=2A gFS Forward Transconductance VDS=5V, ID=3.5A Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current Crss Reverse Transfer Capacitance Rg Gate resistance ±100 nA 2 2.5 V 40 50 61 77 52 70 mΩ 1 V 1.5 A 210 pF A mΩ 12 0.79 DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance µA 5 VGS=10V, ID=3.5A Coss V TJ=55°C VSD Units 1 Zero Gate Voltage Drain Current Static Drain-Source On-Resistance Max 30 VDS=30V, VGS=0V IDSS RDS(ON) Typ 170 VGS=0V, VDS=15V, f=1MHz S 35 pF 23 pF 3.5 5.3 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 4.05 5 nC Qg(4.5V) Total Gate Charge 2 3 nC Qgs Gate Source Charge Qgd Gate Drain Charge VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=15V, ID=3.5A 1.7 0.55 nC 1 nC 4.5 ns tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Body Diode Reverse Recovery Time IF=3.5A, dI/dt=100A/µs 7.5 Qrr Body Diode Reverse Recovery Charge IF=3.5A, dI/dt=100A/µs 2.5 VGS=10V, VDS=15V, RL=4.2Ω, RGEN=3Ω Turn-Off Fall Time 1.5 ns 18.5 ns 15.5 ns 10 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using