AO6604_001

AO6604 20V Complementary MOSFET General Description Product Summary The AO6604 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications. N-Channel VDS= 20V P-Channel -20V ID= 3.4A (VGS=4.5V) -2.5A (VGS=-4.5V) RDS(ON) RDS(ON) < 65mΩ (VGS=4.5V) < 75mΩ (VGS=-4.5V) < 75mΩ (VGS=2.5V) < 95mΩ (VGS=-2.5V) < 100mΩ (VGS=1.8V) < 115mΩ (VGS=-1.8V) TSOP6 Top View D2 D1 Bottom View Top View G1 1 6 D1 S2 2 5 S1 G2 3 4 D2 G1 G2 S1 Pin1 n-channel Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Max n-channel Drain-Source Voltage VDS 20 Gate-Source Voltage VGS TA=25°C Continuous Drain Current Pulsed Drain Current ID TA=70°C C IDM TA=25°C Power Dissipation B PD TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead Rev 4: Sep 2010 Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL www.aosmd.com Units V V ±8 ±8 -2.5 2.5 -2 13 -13 1.1 1.1 0.7 0.7 -55 to 150 Typ 78 106 64 p-channel Max p-channel -20 3.4 TJ, TSTG S2 A W °C Max 110 150 80 Units °C/W °C/W °C/W Page 1 of 9 AO6604 N-Channel Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V Typ V 1 TJ=55°C Gate-Body leakage current VDS=0V, VGS= ±8V Gate Threshold Voltage VDS=VGS ID=250µA 0.4 ID(ON) On state drain current VGS=4.5V, VDS=5V 13 ±100 nA 0.7 1 V 51 65 68 85 VGS=2.5V, ID=3A 58 75 mΩ 100 mΩ 1 V 1.5 A VGS=4.5V, ID=3.4A TJ=125°C A RDS(ON) Static Drain-Source On-Resistance VGS=1.8V, ID=2A 68 gFS Forward Transconductance VDS=5V, ID=3.4A 16 VSD Diode Forward Voltage IS=1A,VGS=0V 0.7 IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=10V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Qrr µA 5 IGSS Crss Units 20 VDS=20V, VGS=0V VGS(th) Coss Max VGS=4.5V, VDS=10V, ID=3.4A mΩ S 205 260 320 pF 33 48 63 pF 16 27 38 pF 1.5 3 4.5 Ω 2.9 3.8 nC 0.4 nC 0.6 nC 2.5 ns VGS=5V, VDS=10V, RL=2.95Ω, RGEN=3Ω 3.2 ns 21 ns IF=3.4A, dI/dt=100A/µs 14 Body Diode Reverse Recovery Charge IF=3.4A, dI/dt=100A/µs 3.8 Body Diode Reverse Recovery Time 3 ns 19 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using