AO6608

AO6608 20V Complementary MOSFET General Description Product Summary The AO6608 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications. N-Channel VDS= 30V P-Channel -20V ID= 3.4A (VGS=10V) -3.3A (VGS=-4.5V) • RoHS and Halogen-Free Compliant RDS(ON) RDS(ON) < 60mΩ (VGS=10V) < 75mΩ (VGS=-4.5V) < 70mΩ (VGS=4.5V) < 105mΩ (VGS=-2.5V) < 90mΩ (VGS=2.5V) < 135mΩ (VGS=-1.8V) TSOP6 Top View D1 Bottom View D2 Top View G1 1 6 D1 S2 2 5 S1 G2 3 4 D2 G1 G2 S1 Pin1 n-channel Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Max n-channel Drain-Source Voltage VDS 30 Gate-Source Voltage VGS TA=25°C Continuous Drain Current ID TA=70°C Pulsed Drain Current C IDM TA=25°C Power Dissipation B PD TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead Rev 1.0: January 2017 Steady-State Steady-State Max p-channel -20 Units V ±12 ±8 V 3.4 -3.3 2.7 -2.5 20 -13 1.25 1.25 0.80 0.80 TJ, TSTG Symbol t ≤ 10s RqJA RqJL www.aosmd.com S2 p-channel -55 to 150 Typ 75 105 50 A W °C Max 100 130 65 Units °C/W °C/W °C/W Page 1 of 9 AO6608 N-Channel Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions ID=250mA, VGS=0V Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=±12V Gate Threshold Voltage VDS=VGS ID=250mA Static Drain-Source On-Resistance 5 0.5 73 88 VGS=4.5V, ID=3A 50 70 mW VGS=2.5V, ID=2A 62 90 mW 14 TJ=125°C IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current 0.75 DYNAMIC PARAMETERS Ciss Input Capacitance Gate resistance V 60 Diode Forward Voltage Rg nA 1.5 VSD Reverse Transfer Capacitance ±100 1 VDS=5V, ID=3.4A Crss mA 46 Forward Transconductance Output Capacitance Units V 1 TJ=55°C gFS Coss Max 30 VGS=10V, ID=3.4A RDS(ON) Typ VDS=30V, VGS=0V IDSS VGS(th) Min VGS=0V, VDS=15V, f=1MHz mW S 1 V 1.5 A 235 pF 35 pF 18 pF 1.8 2.7 W SWITCHING PARAMETERS Qg(10V) Total Gate Charge 6 10 nC Qg(4.5V) Total Gate Charge 3 nC 0.55 nC VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=15V, ID=3.4A 0.9 Qgs Gate Source Charge Qgd Gate Drain Charge 0.8 nC tD(on) Turn-On DelayTime 1.5 ns tr Turn-On Rise Time 2.5 ns tD(off) Turn-Off DelayTime 16 ns tf trr Turn-Off Fall Time 2 ns 6 Qrr Body Diode Reverse Recovery Charge IF=3.4A, dI/dt=100A/ms ns nC Body Diode Reverse Recovery Time VGS=10V, VDS=15V, RL=4.4Ω , RGEN=3Ω IF=3.4A, dI/dt=100A/ms 1.2 A. The value of R qJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation P D is based on T J(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature T J(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RqJA is the sum of the thermal impedence from junction to lead R qJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using