AO6800

AO6800 30V Dual N-Channel MOSFET General Description Product Summary The AO6800 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. ID (at VGS=10V) VDS 30V 3.4A RDS(ON) (at VGS= 10V) < 60mΩ RDS(ON) (at VGS = 4.5V) < 70mΩ RDS(ON) (at VGS = 2.5V) < 90mΩ TSOP6 Top View D1 Bottom View D2 Top View G1 1 6 S2 2 5 S1 G2 3 4 D2 D1 G1 G2 S1 S2 Pin1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TA=25°C Continuous Drain Current Pulsed Drain Current C Power Dissipation B Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead Rev 5: December 2010 Steady-State Steady-State A 20 W 0.73 TJ, TSTG Symbol t ≤ 10s V 1.15 PD TA=70°C ±12 2.7 IDM TA=25°C Units V 3.4 ID TA=70°C Maximum 30 RθJA RθJL www.aosmd.com -55 to 150 Typ 78 106 64 °C Max 110 150 80 Units °C/W °C/W °C/W Page 1 of 5 AO6800 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V TJ=55°C Gate-Body leakage current VDS=0V, VGS=±12V VDS=VGS ID=250µA 0.5 ID(ON) On state drain current VGS=10V, VDS=5V 20 ±100 nA 1 1.5 V 46 60 73 88 VGS=4.5V, ID=3A 50 70 mΩ VGS=2.5V, ID=2A 62 90 mΩ 14 1 V 1.5 A VGS=10V, ID=3.4A TJ=125°C gFS Forward Transconductance VDS=5V, ID=3.4A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance µA 5 Gate Threshold Voltage Units V 1 VGS(th) Static Drain-Source On-Resistance Max 30 VDS=30V, VGS=0V IGSS RDS(ON) Typ VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz A 0.75 mΩ S 235 pF 35 pF 18 pF 4.3 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 10 nC Qg(4.5V) Total Gate Charge 4.7 nC 0.95 nC Qgs Gate Source Charge VGS=10V, VDS=15V, ID=3.4A Qgd Gate Drain Charge 1.6 nC tD(on) Turn-On DelayTime 3.5 ns tr Turn-On Rise Time 1.5 ns tD(off) Turn-Off DelayTime 17.5 ns tf Turn-Off Fall Time 2.5 ns 8.5 ns nC trr Qrr VGS=10V, VDS=15V, RL=4.4Ω, RGEN=3Ω IF=3.4A, dI/dt=100A/µs Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=3.4A, dI/dt=100A/µs 2.55 A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using