AO7405

AO7405 30V P-Channel MOSFET General Description Product Summary VDS The AO7405 uses advanced trench technology to provide excellent RDS(ON), low gate charge, and operation with gate voltages as low as 2.5V, in the small SOT363 footprint. It can be used for a wide variety of applications, including load switching, low current inverters and low current DC-DC converters. ID (at VGS=-10V) -30V -1.4A RDS(ON) (at VGS=-10V) < 115mΩ RDS(ON) (at VGS =-4.5V) < 140mΩ RDS(ON) (at VGS =-2.5V) < 200mΩ SC70-6L (SOT363) D Top View Bottom View Top View D 1 6 D D 2 5 D G 3 4 S G S Pin1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TA=25°C Continuous Drain Current Pulsed Drain Current Power Dissipation Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead Rev 3: April 2011 Steady-State Steady-State A 0.35 W 0.22 TJ, TSTG Symbol t ≤ 10s V -10 PD TA=70°C ±12 -1.0 IDM TA=25°C B Units V -1.4 ID TA=70°C C Maximum -30 RθJA RθJL www.aosmd.com -55 to 150 Typ 300 340 280 °C Max 360 425 320 Units °C/W °C/W °C/W Page 1 of 5 AO7405 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS Zero Gate Voltage Drain Current Conditions Min ID=-250µA, VGS=0V -30 -1 TJ=55°C -5 Gate-Body leakage current VDS=0V, VGS= ±12V VGS(th) Gate Threshold Voltage VDS=VGS ID=-250µA -0.6 ID(ON) On state drain current VGS=-10V, VDS=-5V -10 VGS=-10V, ID=-1.4A Static Drain-Source On-Resistance TJ=125°C 92.5 115 130 160 A mΩ 140 mΩ mΩ IS=-1A,VGS=0V IS Maximum Body-Diode Continuous Current 6 -0.78 DYNAMIC PARAMETERS Ciss Input Capacitance Gate resistance V 200 VDS=-5V, ID=-1.4A Rg nA -1.4 110 Diode Forward Voltage Output Capacitance ±100 -1 150 Forward Transconductance Reverse Transfer Capacitance µA VGS=-2.5V, ID=-1A VSD Coss Units VGS=-4.5V, ID=-1.2A gFS Crss Max V VDS=-30V, VGS=0V IGSS RDS(ON) Typ 260 VGS=0V, VDS=-15V, f=1MHz S -1 V -0.5 A 315 pF 37 pF 20 pF 8 12 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 5.9 7.2 nC Qg(4.5V) Total Gate Charge 2.8 3.5 nC Qgs Gate Source Charge Qgd tD(on) tr Turn-On Rise Time VGS=0V, VDS=0V, f=1MHz VGS=-10V, VDS=-15V, ID=-1.4A 4 0.7 nC Gate Drain Charge 1 nC Turn-On DelayTime 6 ns 3.5 ns VGS=-10V, VDS=-15V, RL=10Ω, RGEN=3Ω tD(off) Turn-Off DelayTime tf Turn-Off Fall Time 20 ns 5 ns trr Body Diode Reverse Recovery Time IF=-1.4A, dI/dt=100A/µs 11.5 Qrr Body Diode Reverse Recovery Charge IF=-1.4A, dI/dt=100A/µs 4.5 15 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedance from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using