AO7408L

AO7408 20V N-Channel MOSFET General Description Product Summary The AO7408 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. VDS Top View 20V 2A ID (at VGS=10V) RDS(ON) (at VGS=4.5V) < 62mΩ RDS(ON) (at VGS=2.5V) < 75mΩ RDS(ON) (at VGS=1.8V) < 85mΩ SC-70-6 (SOT-363) Bottom View D Top View D D G 6 D 2 5 D 3 4 S 1 G S Pin1 Absolute Maximum Ratings TA=25°C unless otherwise noted Pin1 Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage VGS TA=25°C Continuous Drain Current Pulsed Drain Current C Power Dissipation Junction and Storage Temperature Range Thermal Characteristics Parameter A Maximum Junction-to-Ambient AD Maximum Junction-to-Ambient Maximum Junction-to-Lead Rev 4: May 2015 Steady-State Steady-State A 0.35 W 0.22 TJ, TSTG Symbol t ≤ 10s V 16 PD TA=70°C ±8 1.5 IDM TA=25°C B Units V 2 ID TA=70°C Maximum 20 RθJA RθJL www.aosmd.com -55 to 150 Typ 300 340 280 °C Max 360 425 320 Units °C/W °C/W °C/W Page 1 of 5 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current Conditions Min ID=250µA, VGS=0V 1 TJ=55°C VDS=0V, VGS=±8V ±100 nA 0.7 1 V 50 62 70 90 VGS=2.5V, ID=1.8A 56 75 mΩ VGS=1.8V, ID=1A 66 85 mΩ 1 V 0.35 A 320 pF Gate Threshold Voltage VDS=VGS ID=250µA 0.4 VGS=4.5V, VDS=5V 16 VGS=4.5V, ID=2A TJ=125°C A gFS Forward Transconductance VDS=5V, ID=2A 15 VSD Diode Forward Voltage IS=1A,VGS=0V 0.7 IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance 260 VGS=0V, VDS=10V, f=1MHz Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr mΩ S 48 pF 27 VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg Total Gate Charge Qgs µA 5 On state drain current Coss Units V VDS=20V, VGS=0V VGS(th) Static Drain-Source On-Resistance Max 20 ID(ON) RDS(ON) Typ VGS=4.5V, VDS=10V, ID=2A pF 3 4.5 Ω 2.9 4 nC 0.4 nC 0.6 nC 2.5 ns VGS=10V, VDS=10V, RL=5Ω, RGEN=3Ω 3.2 ns 21 ns IF=2A, dI/dt=100A/µs 14 Body Diode Reverse Recovery Charge IF=2A, dI/dt=100A/µs 3.8 3 ns 19 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using