AO7411

AO7411 20V P-Channel MOSFET General Description Product Summary The AO7411 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. ID (at VGS=-4.5V) Top View VDS -20V -1.8A RDS(ON) (at VGS=-4.5V) < 120mΩ RDS(ON) (at VGS =-2.5V) < 150mΩ RDS(ON) (at VGS=-1.8V) < 200mΩ SC-70-6 (SOT-363) Bottom View D Top View D D G 6 D 2 5 D 3 4 S 1 G S Pin1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TA=25°C Continuous Drain Current Pulsed Drain Current C Power Dissipation B Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead Rev 5: May 2015 Steady-State Steady-State A -10 W 0.4 TJ, TSTG Symbol t ≤ 10s V 0.63 PD TA=70°C ±8 -1.5 IDM TA=25°C Units V -1.8 ID TA=70°C Maximum -20 RθJA RθJL www.aosmd.com -55 to 150 Typ 160 180 130 °C Max 200 220 160 Units °C/W °C/W °C/W Page 1 of 5 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS Zero Gate Voltage Drain Current Conditions Min ID=-250µA, VGS=0V -20 -1 TJ=55°C -5 Gate-Body leakage current VDS=0V, VGS= ±8V VGS(th) Gate Threshold Voltage VDS=VGS ID=-250µA -0.4 ID(ON) On state drain current VGS=-4.5V, VDS=-5V -10 nA -1 V 65 120 90 160 VGS=-2.5V, ID=-1.6A 80 150 mΩ VGS=-1.8V, ID=-1.0A 100 200 mΩ 10 -1 V -1 A 745 pF TJ=125°C Forward Transconductance VDS=-5V, ID=-1.8A VSD Diode Forward Voltage IS=-1A,VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Reverse Transfer Capacitance Rg Gate resistance Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime A -0.7 560 VGS=0V, VDS=-10V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=-4.5V, VDS=-10V, ID=-1.8A VGS=-4.5V, VDS=-10V, RL=5.55Ω, RGEN=3Ω mΩ S 80 pF 70 SWITCHING PARAMETERS Qg Total Gate Charge Qgs µA ±100 gFS Crss Units -0.65 VGS=-4.5V, ID=-1.8A Static Drain-Source On-Resistance Max V VDS=-20V, VGS=0V IGSS RDS(ON) Typ pF 15 23.0 8.5 11 Ω nC 1.2 nC 2.1 nC 7.2 ns 36 ns 53 ns tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=-1.8A, dI/dt=100A/µs 37 Qrr Body Diode Reverse Recovery Charge IF=-1.8A, dI/dt=100A/µs 27 56 ns 49 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using