AO7414

AO7414 20V N-Channel MOSFET General Description Product Summary The AO7414 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V, in the small SOT-323 footprint. It can be used for a wide variety of applications, including load switching, low current inverters and low current DCDC converters. VDS RDS(ON) (at VGS=4.5V) < 62mΩ RDS(ON) (at VGS=2.5V) < 70mΩ RDS(ON) (at VGS=1.8V) < 85mΩ Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TA=25°C Continuous Drain Current A Pulsed Drain Current B Power Dissipation A Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead Rev.2.0: April 2013 C Steady-State Steady-State V A 25 W 0.22 TJ, TSTG Symbol t ≤ 10s ±8 0.35 PD TA=70°C Units V 1.5 IDM TA=25°C Maximum 20 2 ID TA=70°C 20V 2A ID (at VGS=4.5V) RθJA RθJL www.aosmd.com -55 to 150 Typ 300 340 280 °C Max 360 425 320 Units °C/W °C/W °C/W Page 1 of 4 AO7414 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS Conditions Min ID=250µA, VGS=0V IGSS Gate-Body leakage current VDS=0V, VGS=±8V VGS(th) Gate Threshold Voltage VDS=VGS，ID=250µA 0.5 ID(ON) On state drain current VGS=4.5V, VDS=5V 25 TJ=55°C ±100 nA 1 V 50 62 70 90 VGS=2.5V, ID=1.8A 56 70 mΩ VGS=1.8V, ID=1A 66 85 mΩ TJ=125°C A gFS Forward Transconductance VDS=5V, ID=2A 15 VSD Diode Forward Voltage IS=1A,VGS=0V 0.7 IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Reverse Transfer Capacitance Rg Gate resistance 260 VGS=0V, VDS=10V, f=1MHz VGS=0V, VDS=0V, f=1MHz Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr VGS=4.5V, VDS=10V, ID=2A mΩ S 1 V 0.35 A 320 pF 48 pF 27 SWITCHING PARAMETERS Qg Total Gate Charge Qgs µA 5 0.68 VGS=4.5V, ID=2A Crss Units V 1 Zero Gate Voltage Drain Current Static Drain-Source On-Resistance Max 20 VDS=20V, VGS=0V IDSS RDS(ON) Typ pF 3 4.5 2.9 3.8 Ω nC 0.4 nC 0.6 nC 2.5 ns VGS=4.5V, VDS=10V, RL=5Ω, RGEN=6Ω 3.2 ns 21 ns IF=2A, dI/dt=100A/µs 14 Body Diode Reverse Recovery Charge IF=2A, dI/dt=100A/µs 3.4 3 ns 19 ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using