AO7415

AO7415 20V P-Channel MOSFET General Description Product Summary The AO7415 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch applications. SC70-6L (SOT-363) VDS -20V ID (at VGS=-10V) -2A RDS(ON) (at VGS= -10V) < 100mΩ RDS(ON) (at VGS= -4.5V) < 125mΩ RDS(ON) (at VGS= -2.5V) < 170mΩ Typical ESD protection HBM Class 2 D Pin1 Bottom View Top View D 1 6 D D 2 5 D G 3 4 S G S Pin1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TA=25°C Continuous Drain Current Pulsed Drain Current C Power Dissipation Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead Rev 4: May 2015 Steady-State Steady-State A 0.63 W 0.4 TJ, TSTG Symbol t ≤ 10s V -13 PD TA=70°C ±12 -1.6 IDM TA=25°C B Units V -2 ID TA=70°C Maximum -20 RθJA RθJL -55 to 150 Typ 160 180 130 www.aosmd.com °C Max 200 220 160 Units °C/W °C/W °C/W Page 1 of 5 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=-250µA, VGS=0V -20 Gate-Body leakage current VDS=0V, VGS= ±12V Gate Threshold Voltage VDS=VGS, ID=-250µΑ -0.5 ID(ON) On state drain current VGS=-4.5V, VDS=-5V -13 VGS=-10V, ID=-2A Forward Transconductance VDS=-5V, ID=-2A VSD Diode Forward Voltage IS=-1A,VGS=0V IS Maximum Body-Diode Continuous Current Output Capacitance Reverse Transfer Capacitance Rg Gate resistance Gate Source Charge Qgd tD(on) tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time µA V A 100 115 mΩ 98 125 mΩ VGS=-2.5V, ID=-1.0A 130 170 mΩ VGS=0V, VDS=-10V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg Total Gate Charge Qgs ±10 -1.2 VGS=-4.5V, ID=-1.3A DYNAMIC PARAMETERS Ciss Input Capacitance Crss -0.85 80 TJ=125°C gFS µA -5 IGSS Static Drain-Source On-Resistance Units -1 TJ=55°C RDS(ON) Max V VDS=-20V, VGS=0V VGS(th) Coss Typ VGS=-4.5V, VDS=-10V, ID=-2A 5 -0.76 S -1 V -1 A 250 325 400 pF 40 63 85 pF 22 37 52 pF 11.2 17 Ω 3.2 4.5 nC 0.6 nC Gate Drain Charge 0.9 nC Turn-On DelayTime 11 ns 5.5 ns 22 ns 8 ns ns nC VGS=-10V, VDS=-10V, RL=5Ω, RGEN=3Ω trr Body Diode Reverse Recovery Time IF=-2A, dI/dt=100A/µs 6.1 Qrr Body Diode Reverse Recovery Charge IF=-2A, dI/dt=100A/µs 1.4 A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedance from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using