AO8801

AO8801 Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO8801 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. It is ESD protected. Standard Product AO8801 is Pbfree (meets ROHS & Sony 259 specifications). VDS (V) = -20V ID = -4.7 A (V GS = -4.5V) RDS(ON) < 42mΩ (VGS = -4.5V) RDS(ON) < 53mΩ (VGS = -2.5V) RDS(ON) < 70mΩ (VGS = -1.8V) ESD Rating: 3000V HBM D TSSOP-8 Top View D1 S1 S1 G1 8 7 6 5 1 2 3 4 D2 S2 S2 G2 G1 Pulsed Drain Current TA=25°C ID IDM TA=70°C B Junction and Storage Temperature Range Alpha & Omega Semiconductor, Ltd. Maximum -20 Units V ±8 V -30 1.4 W 0.9 TJ, TSTG °C -55 to 150 Symbol t ≤ 10s Steady-State Steady-State A -3.7 PD TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C S2 -4.7 TA=25°C Power Dissipation A G2 S1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A D2 RθJA RθJL Typ 73 96 63 Max 90 125 75 Units °C/W °C/W °C/W AO8801 Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VGS(th) Gate Threshold Voltage On state drain current ID(ON) Conditions Min ID=-250µA, VGS=0V VDS=-16V, VGS=0V -20 VDS=0V, VGS=±4.5V VDS=0V, VGS=±8V VDS=VGS ID=-250µA VGS=-4.5V, VDS=-5V -0.3 -25 gFS VSD IS Static Drain-Source On-Resistance TJ=125°C VGS=-2.5V, ID=-4A VGS=-1.8V, ID=-2A Forward Transconductance VDS=-5V, ID=-4.7A Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current 8 Max Units V TJ=55°C VGS=-4.5V, ID=-4.7A RDS(ON) Typ -0.55 -1 -5 µA ±1 ±10 µA µA -1 A 35 47 42 57 44 53 mΩ 70 mΩ 54 16 -0.78 mΩ S -1 V -2.2 A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VGS=0V, VDS=-10V, f=1MHz 1450 205 pF pF Rg VGS=0V, VDS=0V, f=1MHz 160 6.5 pF Ω VGS=-4.5V, VDS=-10V, ID=-4A 17.2 1.3 nC nC 4.5 9.5 17 94 35 31 nC ns ns ns ns Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) tr tD(off) tf trr Qrr Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time VGS=-4.5V, VDS=-10V, RL=2.5Ω, RGEN=3Ω IF=-4A, dI/dt=100A/µs Body Diode Reverse Recovery Charge IF=-4A, dI/dt=100A/µs Body Diode Reverse Recovery Time 13.8 ns nC A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using