AO8801A

AO8801A 20V P-Channel MOSFET General Description Product Summary The AO8801A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. ID (at VGS=-10V) -20V -4.5A RDS(ON) (at VGS= -4.5V) < 42mΩ VDS RDS(ON) (at VGS= -2.5V) < 54mΩ RDS(ON) (at VGS= -1.8V) < 68mΩ ESD Protected Top View D1 TSSOP8 Bottom View D2 Top View D1 S1 S1 G1 1 2 3 4 8 7 6 5 D2 S2 S2 G2 G1 G2 S1 S2 Pin 1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TA=25°C Continuous Drain Current Pulsed Drain Current C Power Dissipation B Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead Rev 1: Sep 2011 Steady-State Steady-State A 1.5 W 0.96 TJ, TSTG Symbol t ≤ 10s V -30 PD TA=70°C ±8 -3.6 IDM TA=25°C Units V -4.5 ID TA=70°C Maximum -20 RθJA RθJL www.aosmd.com -55 to 150 Typ 63 101 64 °C Max 83 130 83 Units °C/W °C/W °C/W Page 1 of 5 AO8801A Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS Conditions Min ID=-250µA, VGS=0V -20 -1 Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS= ±8V VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250µΑ -0.3 ID(ON) On state drain current VGS=-4.5V, VDS=-5V -30 TJ=55°C -5 ±10 µA V 35 42 49 59 VGS=-2.5V, ID=-4A 43 54 mΩ VGS=-1.8V, ID=-3A 54 68 mΩ 20 TJ=125°C Forward Transconductance VDS=-5V, ID=-4.5A VSD Diode Forward Voltage IS=-1A,VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Input Capacitance Ciss Coss Output Capacitance Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=-10V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge µA -0.9 gFS Crss Units -0.57 VGS=-4.5V, ID=-4.5A Static Drain-Source On-Resistance Max V VDS=-20V, VGS=0V IDSS RDS(ON) Typ VGS=-4.5V, VDS=-10V, ID=-4.5A A -0.64 mΩ S -1 V -2 A 905 pF 600 751 80 115 150 pF 48 80 115 pF 6 13 20 Ω 7.4 9.3 11 nC 0.8 1 1.2 nC 1.3 2.2 3.1 nC tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=-4.5A, dI/dt=500A/µs 20 26 32 Qrr Body Diode Reverse Recovery Charge IF=-4.5A, dI/dt=500A/µs 40 51 62 VGS=-4.5V, VDS=-10V, RL=2.2Ω, RGEN=3Ω 13 ns 9 ns 19 ns 29 ns ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedance from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using