AO8808A

AO8808A Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO8808A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. It is ESD protected. Standard Product AO8808A is Pb-free (meets ROHS & Sony 259 specifications). VDS (V) = 20V ID = 7.9A (VGS = 10V) RDS(ON) < 14mΩ (VGS = 10V) RDS(ON) < 15mΩ (VGS = 4.5V) RDS(ON) < 20mΩ (VGS = 2.5V) RDS(ON) < 28mΩ (VGS = 1.8V) ESD Rating: 2000V HBM TSSOP-8 Top View D1 S1 S1 G1 1 2 3 4 D2 D1 8 7 6 5 D2 S2 S2 G2 G1 G2 S1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage TA=25°C Continuous Drain Current A Pulsed Drain Current ID IDM TA=70°C B Junction and Storage Temperature Range Alpha & Omega Semiconductor, Ltd. Units V ±12 V 30 1.4 W 0.9 TJ, TSTG °C -55 to 150 Symbol t ≤ 10s Steady-State Steady-State A 6.3 PD TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Maximum 20 7.9 TA=25°C Power Dissipation A S2 RθJA RθJL Typ 73 96 63 Max 90 125 75 Units °C/W °C/W °C/W AO8808A Electrical Characteristics (T J=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V 20 Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=±10V 25 BVGSO Gate-Source Breakdown Voltage VDS=0V, IG=±250uA ±12 Gate Threshold Voltage VDS=VGS ID=250µA 0.5 ID(ON) On state drain current VGS=4.5V, VDS=5V 30 VGS=10V, ID=8A 18 VGS=4.5V, ID=5A 11.7 15 mΩ VGS=2.5V, ID=4A 15.2 20 mΩ VGS=1.8V, ID=3A 21.5 28 mΩ 1 V 2.4 A VDS=5V, ID=8A 36 0.6 DYNAMIC PARAMETERS Ciss Input Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge V 14 Diode Forward Voltage IS=1A,V GS=0V Maximum Body-Diode Continuous Current Rg 1 14.2 Forward Transconductance Crss µA A VSD Output Capacitance 10 V 0.75 gFS Coss µA 10.6 TJ=125°C IS Units 10 TJ=55°C VGS(th) Static Drain-Source On-Resistance Max V VDS=16V, V GS=0V IDSS RDS(ON) Typ VGS=0V, VDS=10V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=4.5V, VDS=10V, ID=8A mΩ S 1810 pF 232 pF 200 pF 1.6 Ω 17.9 nC 1.5 nC Qgd Gate Drain Charge 4.7 nC tD(on) Turn-On DelayTime 2.5 ns tr Turn-On Rise Time 7.2 ns tD(off) Turn-Off DelayTime tf Turn-Off Fall Time VGS=10V, V DS=10V, R L=1.2Ω, RGEN=3Ω trr Body Diode Reverse Recovery Time IF=8A, dI/dt=100A/µs Qrr Body Diode Reverse Recovery Charge IF=8A, dI/dt=100A/µs 49 ns 10.8 ns 20.2 8 ns nC A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using