AO8820

AO8820 20V Common-Drain Dual N-Channel MOSFET General Description Product Summary The AO8820 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load switch, facilitated by its common-drain configuration. VDS 20V 7A ID (at VGS=10V) RDS(ON) (at VGS=10V) < 21mΩ RDS(ON) (at VGS=4.5V) < 24mΩ RDS(ON) (at VGS=3.6V) < 28mΩ RDS(ON) (at VGS=2.5V) < 32mΩ RDS(ON) (at VGS=1.8V) < 50mΩ ESD protected! Top View Top View D1/D2 S1 S1 G1 1 2 3 4 8 7 6 5 D1/D2 S2 S2 G2 G2 G1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TA=25°C TA=25°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead Rev 7: April. 2012 Steady-State Steady-State V A 1.5 W 0.96 TJ, TSTG Symbol t ≤ 10s ±12 30 PD Junction and Storage Temperature Range Units V 5.5 IDM TA=70°C Maximum 20 7 ID TA=70°C Pulsed Drain Current C Power Dissipation B S2 S1 Pin 1 Continuous Drain Current D2 D1 TSSOP8 Bottom View RθJA RθJL www.aosmd.com -55 to 150 Typ 64 89 53 °C Max 83 120 70 Units °C/W °C/W °C/W Page 1 of 5 AO8820 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V TJ=55°C Gate-Body leakage current VDS=0V, VGS= ±10V VDS=VGS ID=250µA 0.5 ID(ON) On state drain current VGS=10V, VDS=5V 30 VGS=10V, ID=7A 13 TJ=125°C 10 µA 0.8 1.1 V 17.2 21 24 29 A VGS=4.5V, ID=6.6A 15 19.4 24 VGS=3.6V, ID=6A 16 20.7 28 VGS=2.5V, ID=5.5A 18 VGS=1.8V, ID=2A 25 32 35 50 gFS Forward Transconductance VDS=5V, ID=7A 25 VSD Diode Forward Voltage IS=1A,VGS=0V 0.65 IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VGS=0V, VDS=10V, f=1MHz SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge µA 5 Gate Threshold Voltage mΩ S 1 V 2.5 A 500 pF 100 pF 52 pF 6 VGS=4.5V, VDS=10V, ID=7A Units V 1 VGS(th) Static Drain-Source On-Resistance Max 20 VDS=16V, VGS=0V IGSS RDS(ON) Typ 9 nC 2 nC Qgd Gate Drain Charge 1 nC tD(on) Turn-On DelayTime 0.2 us tr Turn-On Rise Time 1.5 us tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr VGS=5V, VDS=10V, RL=1.4Ω, RGEN=3Ω 7.4 us 18 us IF=7A, dI/dt=100A/µs 9 Body Diode Reverse Recovery Charge IF=7A, dI/dt=100A/µs 10 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using