AO8822

AO8822 20V Common-Drain Dual N-Channel MOSFET General Description Product Summary The AO8822 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. This device is suitable for use as a uni-directional or bi-directional load switch, facilitated by its commondrain configuration. VDS 20V 7A ID (at VGS=10V) RDS(ON) (at VGS=10V) < 18mΩ RDS(ON) (at VGS = 4.5V) < 22mΩ RDS(ON) (at VGS = 3.6V) < 23mΩ RDS(ON) (at VGS = 2.5V) < 27mΩ ESD Protected Top View TSSOP8 Bottom View D1/D2 S1 1 2 3 4 S1 G1 8 7 6 5 D1/D2 S2 S2 G2 G Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter Drain-Source Voltage VDS Gate-Source Voltage VGS TA=25°C Pulsed Drain Current C Power Dissipation Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead Rev 6 : March 2011 Steady-State Steady-State ±12 V A 1.5 W 1 TJ, TSTG Symbol t ≤ 10s Units V 30 PD TA=70°C Maximum 20 6 IDM TA=25°C S 7 ID TA=70°C B G S Pin 1 Continuous Drain Current D D RθJA RθJL www.aosmd.com -55 to 150 Typ 63 101 64 °C Max 83 130 83 Units °C/W °C/W °C/W Page 1 of 5 AO8822 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V IGSS Gate-Body leakage current VDS=0V, VGS= ±10V BVGSO Gate-Source Breakdown Voltage VDS=0V, IG=±250µA ±12 VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 0.5 ID(ON) On state drain current VGS=10V, VDS=5V 30 VGS=10V, ID=7A 13 TJ=55°C V 0.8 15 18 22 27 15 17 22 mΩ 16 18 23 mΩ VGS=2.5V, ID=5.5A 18 21 27 mΩ 28 31 VSD Diode Forward Voltage IS=1A,VGS=0V 0.7 IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance 520 VGS=0V, VDS=10V, f=1MHz SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime mΩ VGS=3.6V, ID=6A VGS=1.8V, ID=2A Output Capacitance V VGS=4.5V, ID=6.6A VDS=5V, ID=7A Reverse Transfer Capacitance 1 A Forward Transconductance Crss µA 10 gFS Coss µA 5 TJ=125°C Units V 1 Zero Gate Voltage Drain Current Static Drain-Source On-Resistance Max 20 VDS=20V, VGS=0V IDSS RDS(ON) Typ VGS=10V, VDS=10V, ID=7A 650 mΩ S 1 V 2 A 780 pF 140 pF 60 pF 12 15 18 nC 5 6.7 8 nC VGS=10V, VDS=10V, RL=1.5Ω, RGEN=3Ω 3.6 nC 3 nC 0.25 us 0.45 us 11 us tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=7A, dI/dt=500A/µs 8 10 12 Qrr Body Diode Reverse Recovery Charge IF=7A, dI/dt=500A/µs 8 11 13.5 4 us ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using