AO9926C

AO9926C 20V Dual N-Channel MOSFET General Description Product Summary The AO9926C uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. This device is suitable for use as a unidirectional or bi-directional load switch. VDS 20V 7.6A ID (at VGS=10V) RDS(ON) (at VGS=10V) < 23mΩ RDS(ON) (at VGS =4.5V) < 26mΩ RDS(ON) (at VGS=2.5V) < 34mΩ RDS(ON) (at VGS=1.8V) < 52mΩ 100% Rg Tested SOIC-8 Top View D1 Bottom View D2 Top View S2 1 8 D2 G2 S1 2 3 4 7 6 5 D2 D1 G1 G1 D1 G2 S1 S2 Pin1 Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage TA=25°C Continuous Drain Current C Power Dissipation B Junction and Storage Temperature Range Thermal Characteristics Parameter A Maximum Junction-to-Ambient AD Maximum Junction-to-Ambient Maximum Junction-to-Lead Rev 0: Sep 2010 2 Steady-State Steady-State W 1.28 TJ, TSTG Symbol t ≤ 10s A 38 PD TA=70°C V 6.1 IDM TA=25°C Units V 7.6 ID TA=70°C Pulsed Drain Current Maximum 20 ±12 RθJA RθJL www.aosmd.com -55 to 150 Typ 48 74 32 °C Max 62.5 90 40 Units °C/W °C/W °C/W Page 1 of 5 AO9926C Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V Typ Max 20 V VDS=20V, VGS=0V 1 TJ=55°C µA 5 IGSS Gate-Body leakage current VDS=0V, VGS= ±12V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 0.4 ID(ON) On state drain current VGS=10V, VDS=5V 38 Units ±100 nA 0.75 1.1 V 16.5 23 25 30 VGS=4.5V, ID=7A 18.5 26 mΩ VGS=2.5V, ID=6A 24 34 mΩ VGS=1.8V, ID=2A 32 52 mΩ Forward Transconductance VDS=5V, ID=7.6A 25 VSD Diode Forward Voltage IS=1A,VGS=0V 0.7 IS Maximum Body-Diode Continuous Current VGS=10V, ID=7.6A TJ=125°C RDS(ON) gFS Static Drain-Source On-Resistance DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz A mΩ S 1 V 2.5 A 420 525 630 pF 65 95 125 pF 45 75 105 pF 0.8 1.7 2.6 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 12.5 nC Qg(4.5V) Total Gate Charge 6 nC VGS=10V, VDS=15V, ID=7.6A Qgs Gate Source Charge 1 nC Qgd Gate Drain Charge 2 nC tD(on) Turn-On DelayTime 3 ns 7.5 ns 20 ns 6 ns ns nC tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time VGS=10V, VDS=15V, RL=1.3Ω, RGEN=3Ω trr Body Diode Reverse Recovery Time IF=7.6A, dI/dt=100A/µs 14 Qrr Body Diode Reverse Recovery Charge IF=7.6A, dI/dt=100A/µs 6 A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using