AOB1100L

AOT1100L/AOB1100L 100V N-Channel Rugged Planar MOSFET General Description Product Summary The AOT1100L/AOB1100L uses a robust technology that is designed to provide efficient and reliable power conversion even in the most demanding applications, including motor control. With low RDS(ON) and excellent thermal capability this device is appropriate for high current switching and can endure adverse operating conditions.This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. VDS 100V ID (at VGS=10V) 130A RDS(ON) (at VGS=10V) < 12mΩ 100% UIS Tested 100% Rg Tested TO-263 D2PAK TO220 Top View Bottom View Top View D D G D D D S S D G G S G G AOT1100 Gate-Source Voltage VGS TC=25°C Pulsed Drain Current C Continuous Drain Current TA=25°C Units V ±20 V 92 A 208 IDM 8 IDSM TA=70°C Maximum 100 130 ID TC=100°C S S AOB1100 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Continuous Drain Current G D Bottom View A 6 Avalanche Current C IAS 122 A Avalanche energy L=0.1mH C TC=25°C EAS 744 mJ Power Dissipation B TA=25°C Power Dissipation A Junction and Storage Temperature Range Rev0: Dec 2011 2.1 Steady-State Steady-State RθJA RθJC W 1.3 TJ, TSTG Symbol t ≤ 10s W 250 PDSM TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case 500 PD TC=100°C -55 to 175 Typ 12 48 0.22 www.aosmd.com °C Max 15 60 0.3 Units °C/W °C/W °C/W Page 1 of 6 AOT1100L/AOB1100L Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V 100 1 TJ=55°C Gate-Body leakage current VDS=0V, VGS= ±20V Gate Threshold Voltage VDS=VGS, ID=250µΑ 2.6 ID(ON) On state drain current VGS=10V, VDS=5V 208 VGS=10V, ID=20A TO220 Static Drain-Source On-Resistance gFS Forward Transconductance VGS=10V, ID=20A TO263 VDS=5V, ID=20A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous CurrentG TJ=125°C DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=25V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg(10V) Total Gate Charge VGS=10V, VDS=50V, ID=20A 0.5 Units µA 5 IGSS RDS(ON) Max V VDS=100V, VGS=0V VGS(th) Coss Typ 100 nA 3.2 3.8 V 10 12 19 22 9.7 53 11.7 mΩ S 0.69 1 V 130 A A mΩ 4833 pF 721 pF 35 pF 1.1 1.7 Ω 82 100 nC Qgs Gate Source Charge 23 nC Qgd Gate Drain Charge 19 nC tD(on) Turn-On DelayTime 21 ns tr Turn-On Rise Time 22 ns tD(off) Turn-Off DelayTime 50 ns tf Turn-Off Fall Time 4.5 ns ns nC VGS=10V, VDS=50V, RL=2.5Ω, RGEN=3Ω trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs 64 Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 880 A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. Maximum UIS current limited by test equipment. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using