AOB11S65L

AOT11S65/AOB11S65/AOTF11S65 650V 11A α MOS TM Power Transistor General Description Product Summary The AOT11S65 & AOB11S65 & AOTF11S65 have been TM fabricated using the advanced αMOS high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. VDS @ Tj,max 750V IDM 45A RDS(ON),max 0.399Ω Qg,typ 13.2nC Eoss @ 400V 2.9µJ 100% UIS Tested 100% Rg Tested For Halogen Free add "L" suffix to part number: AOT11S65L & AOB11S65L & AOTF11S65L Top View TO-220 TO-263 D2PAK TO-220F D D G D G S AOT11S65 G D S S AOB11S65 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter AOT11S65/AOB11S65 Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current Pulsed Drain Current TC=100°C C ID Repetitive avalanche energy C Single pulsed avalanche energy G TC=25°C Power Dissipation B Derate above 25oC MOSFET dv/dt ruggedness Peak diode recovery dv/dt H Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds J Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D AOTF11S65L V ±30 11* 11* 8* 8* 8 Units V A 45 IAR 2 A EAR 60 mJ EAS PD 120 198 1.6 dv/dt TJ, TSTG TL Symbol RθJA RθCS Maximum Case-to-sink A Maximum Junction-to-Case RθJC * Drain current limited by maximum junction temperature. Rev1: Mar 2012 AOTF11S65 650 11 IDM Avalanche Current C S G AOTF11S65 39 0.31 100 20 -55 to 150 mJ 31 W 0.25 W/ oC V/ns °C °C 300 AOT11S65/AOB11S65 AOTF11S65 AOTF11S65L 65 65 65 °C/W 0.5 0.63 -3.25 -4 °C/W °C/W www.aosmd.com Units Page 1 of 7 AOT11S65/AOB11S65/AOTF11S65 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units ID=250µA, VGS=0V, TJ=25°C 650 - - ID=250µA, VGS=0V, TJ=150°C 700 750 - V µA STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VDS=650V, VGS=0V - - 1 VDS=520V, TJ=150°C - 10 - IGSS Gate-Body leakage current VDS=0V, VGS=±30V - - ±100 VGS(th) Gate Threshold Voltage VDS=5V,ID=250µA 2.6 3.3 4 nΑ V RDS(ON) Static Drain-Source On-Resistance VSD Diode Forward Voltage IS ISM VGS=10V, ID=5.5A, TJ=25°C - 0.35 0.399 Ω VGS=10V, ID=5.5A, TJ=150°C - 0.98 1.11 Ω IS=5.5A,VGS=0V, TJ=25°C - 0.82 - V Maximum Body-Diode Continuous Current - - 11 A Maximum Body-Diode Pulsed CurrentC - - 45 A - 646 - pF - 42 - pF - 33 - pF - 117 - pF DYNAMIC PARAMETERS Input Capacitance Ciss Coss Output Capacitance Co(er) Effective output capacitance, energy related H VGS=0V, VDS=100V, f=1MHz VGS=0V, VDS=0 to 480V, f=1MHz Crss Effective output capacitance, time related I Reverse Transfer Capacitance VGS=0V, VDS=100V, f=1MHz - 1.1 - pF Rg Gate resistance VGS=0V, VDS=0V, f=1MHz - 18 - Ω - 13.2 - nC - 3.2 - nC Co(tr) SWITCHING PARAMETERS Total Gate Charge Qg VGS=10V, VDS=480V, ID=5.5A Qgs Gate Source Charge Qgd Gate Drain Charge - 4.3 - nC tD(on) Turn-On DelayTime - 25 - ns tr Turn-On Rise Time - 20 - ns tD(off) Turn-Off DelayTime - 77 - ns tf trr Turn-Off Fall Time - 19 - ns IF=5.5A,dI/dt=100A/µs,VDS=400V VGS=10V, VDS=400V, ID=5.5A, RG=25Ω Body Diode Reverse Recovery Time Peak Reverse Recovery Current - 278 - ns Irm IF=5.5A,dI/dt=100A/µs,VDS=400V - 22 - Qrr Body Diode Reverse Recovery Charge IF=5.5A,dI/dt=100A/µs,VDS=400V - 4.2 - A µC A. The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using