AOT12N50/AOB12N50/AOTF12N50
500V, 12A N-Channel MOSFET
General Description
Product Summary
The AOT12N50 & AOB12N50 & AOTF12N50 have been
fabricated using an advanced high voltage MOSFET
process that is designed to deliver high levels of
performance and robustness in popular AC-DC
applications.By providing low RDS(on), Ciss and Crss along
with guaranteed avalanche capability these parts can be
adopted quickly into new and existing offline power supply
designs.
VDS
ID (at VGS=10V)
600V@150℃
12A
RDS(ON) (at VGS=10V)
< 0.52Ω
100% UIS Tested
100% Rg Tested
For Halogen Free add "L" suffix to part number:
AOT12N50L & AOTF12N50L & AOB12N50L
Top View
TO-220
TO-263
D2PAK
TO-220F
D
D
G
G
D
S
AOT12N50
AOTF12N50
G
D
S
S
AOB12N50
Absolute Maximum Ratings TA=25°C unless otherwise noted
AOT12N50/AOB12N50
Parameter
Symbol
Drain-Source Voltage
500
VDS
Gate-Source Voltage
VGS
TC=25°C
Continuous Drain
Current
Pulsed Drain Current
TC=100°C
C
AOTF12N50
±30
ID
S
G
Units
V
V
12
12*
8.4
8.4*
A
IDM
48
Avalanche Current C
IAR
5.5
A
Repetitive avalanche energy C
EAR
454
mJ
Single plused avalanche energy G
MOSFET dv/dt ruggedness
Peak diode recovery dv/dt
TC=25°C
Power Dissipation B Derate above 25oC
EAS
908
40
5
Junction and Storage Temperature Range
TJ, TSTG
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A,D
dv/dt
PD
50
W
2
0.4
-55 to 150
W/ oC
°C
300
°C
AOT12N50/AOB12N50
65
AOTF12N50
65
Units
°C/W
0.5
0.5
-2.5
°C/W
°C/W
Maximum Case-to-sink A
Maximum Junction-to-Case
RθJC
* Drain current limited by maximum junction temperature.
Rev.8.0: April 2014
250
TL
Symbol
RθJA
RθCS
mJ
V/ns
www.aosmd.com
Page 1 of 6
AOT12N50/AOB12N50/AOTF12N50
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
ID=250µA, VGS=0V, TJ=25°C
500
Typ
Max
Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
BVDSS
/∆TJ
Breakdown Voltage Temperature
Coefficient
IDSS
Zero Gate Voltage Drain Current
IGSS
ID=250µA, VGS=0V, TJ=150°C
600
V
ID=250µA, VGS=0V
0.54
V/ oC
VDS=500V, VGS=0V
1
VDS=400V, TJ=125°C
10
Gate-Body leakage current
VDS=0V, VGS=±30V
VGS(th)
Gate Threshold Voltage
VDS=5V ID=250µA
RDS(ON)
Static Drain-Source On-Resistance
gFS
Forward Transconductance
VSD
Diode Forward Voltage
IS=1A,VGS=0V
IS
ISM
3.9
4.5
nΑ
V
VGS=10V, ID=6A
0.36
0.52
Ω
VDS=40V, ID=6A
16
1
V
Maximum Body-Diode Continuous Current
12
A
Maximum Body-Diode Pulsed Current
48
A
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
±100
µA
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
Gate Source Charge
S
0.72
1089
1361
1633
pF
VGS=0V, VDS=25V, f=1MHz
134
167
200
pF
10
12.6
15
pF
VGS=0V, VDS=0V, f=1MHz
1.8
3.6
5.4
Ω
30.7
37
nC
7.6
9
nC
SWITCHING PARAMETERS
Qg
Total Gate Charge
Qgs
3.3
VGS=10V, VDS=400V, ID=12A
Qgd
Gate Drain Charge
13.0
16
nC
tD(on)
Turn-On DelayTime
29
35
ns
tr
Turn-On Rise Time
69
83
ns
tD(off)
Turn-Off DelayTime
82
98
ns
tf
trr
Turn-Off Fall Time
55.5
67
ns
IF=12A,dI/dt=100A/µs,VDS=100V
231
277
Qrr
Body Diode Reverse Recovery Charge IF=12A,dI/dt=100A/µs,VDS=100V
2.82
3.4
ns
µC
Body Diode Reverse Recovery Time
VGS=10V, VDS=250V, ID=12A,
RG=25Ω
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using
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