AOB12N65L

AOT12N65/AOTF12N65/AOTF12N65L/AOB12N65L 650V, 12A N-Channel MOSFET General Description Product Summary VDS The AOT12N65 & AOTF12N65 & AOTF12N65L & AOB12N65L have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular ACDC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. ID (at VGS=10V) 750V@150℃ 12A RDS(ON) (at VGS=10V) < 0.72W 100% UIS Tested 100% Rg Tested Top View TO-220 D TO-263 D2PAK TO-220F D G D S AOT12N65 G S D S G G AOTF12N65(L) S AOB12N65L Orderable Part Number Package Type Form Minimum Order Quantity AOT12N65 AOTF12N65 AOTF12N65L AOB12N65L TO-220 Pb Free TO-220F Pb Free TO-220F Green TO-263 Green Tube Tube Tube Tape & Reel 1000 1000 1000 800 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol AOT(B)12N65(L) Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current VGS TC=25°C TC=100°C AOTF12N65 650 AOTF12N65L ±30 12 ID 7.7 Units V V 12* 12* 7.7* 7.7* A Pulsed Drain Current C IDM Avalanche Current C IAR 5 A Repetitive avalanche energy C EAR 375 mJ Single plused avalanche energy G MOSFET dv/dt ruggedness Peak diode recovery dv/dt TC=25°C Power Dissipation B Derate above 25oC EAS 750 30 5 50 mJ Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D TJ, TSTG dv/dt 278 PD 2.2 TL 0.4 -55 to 150 V/ns 40 W 0.3 W/ oC °C 300 Symbol RqJA RqCS Maximum Case-to-sink A Maximum Junction-to-Case RqJC * Drain current limited by maximum junction temperature. Rev.8.0: January 2021 48 °C AOT(B)12N65(L) 65 AOTF12N65 65 AOTF12N65L 65 Units °C/W 0.5 0.45 -2.5 -3.1 °C/W °C/W www.aosmd.com Page 1 of 6 AOT12N65/AOTF12N65/AOTF12N65L/AOB12N65L Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min ID=250μA, VGS=0V, TJ=25°C 650 Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage BVDSS /∆TJ Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=±30V VGS(th) VDS=5V ID=250mA RDS(ON) Gate Threshold Voltage Static Drain-Source On-Resistance gFS Forward Transconductance VSD Diode Forward Voltage IS=1A,VGS=0V IS ISM ID=250μA, VGS=0V, TJ=150°C 750 V ID=250μA, VGS=0V 0.72 V/ oC VDS=650V, VGS=0V 1 VDS=520V, TJ=125°C 10 ±100 mA 3.9 4.5 nA V VGS=10V, ID=6A 0.57 0.72 W VDS=40V, ID=6A 17 3 S 1 V Maximum Body-Diode Continuous Current 12 A Maximum Body-Diode Pulsed Current 48 A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance 1430 1792 2150 pF 120 152 185 pF 9 11.5 18 pF VGS=0V, VDS=0V, f=1MHz 1.7 3.5 5.3 W 32 39.8 48 nC VGS=10V, VDS=520V, ID=12A 7.5 9.2 11 nC 13.5 16.8 20 nC VGS=0V, VDS=25V, f=1MHz SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Qrr Body Diode Reverse Recovery Charge IF=12A,dI/dt=100A/ms,VDS=100V Body Diode Reverse Recovery Time 0.71 VGS=10V, VDS=325V, ID=12A, RG=25W 36 ns 77 ns 120 ns 63 IF=12A,dI/dt=100A/ms,VDS=100V ns 300 375 450 6 7.5 9 ns μC A. The value of R qJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature T J(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The R qJA is the sum of the thermal impedence from junction to case R qJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using