AOB254L

AOT254L/AOB254L 150V N-Channel MOSFET General Description Product Summary The AOT254L/AOB254L uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON), Ciss and Coss. This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. VDS 150V 32A ID (at VGS=10V) RDS(ON) (at VGS=10V) < 46mΩ RDS(ON) (at VGS =4.5V) < 53mΩ 100% UIS Tested 100% Rg Tested TO220 Top View Bottom View Top View TO-263 D2PAK D Bottom View D D D D G G D S S AOT254L D G S G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current Pulsed Drain Current C C Avalanche Current Avalanche energy L=0.1mH C TC=25°C Power Dissipation B TA=25°C Power Dissipation A Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case Rev 0 : March. 2011 Steady-State Steady-State A A IAS 12 A EAS 7 mJ 125 W 62.5 2.1 RθJA RθJC W 1.3 TJ, TSTG Symbol t ≤ 10s V 4.2 PDSM TA=70°C ±20 3.3 PD TC=100°C Units V 70 IDSM TA=70°C Maximum 150 22.5 IDM TA=25°C Continuous Drain Current S S AOB254L 32 ID TC=100°C G -55 to 175 Typ 12 48 0.7 www.aosmd.com °C Max 15 60 1.2 Units °C/W °C/W °C/W Page 1 of 6 AOT254L/AOB254L Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V 150 1 Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS，ID=250µA 1.7 ID(ON) On state drain current VGS=10V, VDS=5V 70 TJ=55°C nA 2.7 V 37 46 74 90 VGS=4.5V, ID=20A 40 53 TJ=125°C A gFS Forward Transconductance VDS=5V, ID=20A 55 VSD Diode Forward Voltage IS=1A,VGS=0V 0.7 IS Maximum Body-Diode Continuous Current G DYNAMIC PARAMETERS Ciss Input Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance µA 5 ±100 Static Drain-Source On-Resistance Output Capacitance Units 2.2 VGS=10V, ID=20A Coss Max V VDS=150V, VGS=0V IDSS RDS(ON) Typ mΩ mΩ S 1 V 46 A 2150 pF VGS=0V, VDS=75V, f=1MHz 110 pF 4 pF VGS=0V, VDS=0V, f=1MHz 2.3 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 27 40 nC Qg(4.5V) Total Gate Charge 12 17 nC Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime VGS=10V, VDS=75V, ID=20A 7 nC 3 nC 9 ns VGS=10V, VDS=75V, RL=3.75Ω, RGEN=3Ω 10 ns 29 ns tf Turn-Off Fall Time 4 ns trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs 51 Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 434 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using