AOB256L

AOB256L 150V N-Channel MOSFET General Description Product Summary The AOB256L uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON), Ciss and Coss. This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. VDS 150V 19A ID (at VGS=10V) RDS(ON) (at VGS=10V) < 85mΩ RDS(ON) (at VGS=4.5V) < 100mΩ 100% UIS Tested 100% Rg Tested TO-263 D2PAK Top View Bottom View D D D G S G G S S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current Pulsed Drain Current C Avalanche Current C Avalanche energy L=0.1mH C TC=25°C Power Dissipation B TA=25°C Power Dissipation A Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case Rev 0: August 2012 3 9 A EAS 4 mJ 83 Steady-State Steady-State W 41.5 2.1 RθJA RθJC W 1.3 TJ, TSTG Symbol t ≤ 10s A IAS PDSM TA=70°C A 2.5 PD TC=100°C V 35 IDSM TA=70°C ±20 13.5 IDM TA=25°C Continuous Drain Current Units V 19 ID TC=100°C Maximum 150 -55 to 175 Typ 12 50 1.5 www.aosmd.com °C Max 15 60 1.8 Units °C/W °C/W °C/W Page 1 of 6 AOB256L Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V 150 1 Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS，ID=250µA 1.8 ID(ON) On state drain current VGS=10V, VDS=5V 35 TJ=55°C ±100 nA 2.25 2.8 V 70 85 139 170 VGS=4.5V, ID=8A 78 100 mΩ 35 1 V 19 A Static Drain-Source On-Resistance TJ=125°C gFS Forward Transconductance VDS=5V, ID=10A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current Crss Reverse Transfer Capacitance Rg Gate resistance A 0.72 DYNAMIC PARAMETERS Input Capacitance Ciss Output Capacitance Units µA 5 VGS=10V, ID=10A Coss Max V VDS=150V, VGS=0V IDSS RDS(ON) Typ VGS=0V, VDS=75V, f=1MHz S 1165 pF 61.5 pF 2.5 VGS=0V, VDS=0V, f=1MHz 1.1 mΩ 2.2 pF 3.3 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 15.5 22 nC Qg(4.5V) Total Gate Charge 7 10 nC Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime VGS=10V, VDS=75V, ID=10A VGS=10V, VDS=75V, RL=7.5Ω, RGEN=3Ω 4 nC 1.2 nC 6.5 ns 5 ns 23 ns tf Turn-Off Fall Time 2.5 ns trr Body Diode Reverse Recovery Time IF=10A, dI/dt=500A/µs 37 Qrr Body Diode Reverse Recovery Charge IF=10A, dI/dt=500A/µs 265 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using