AOB280L

AOT280L/AOB280L 80V N-Channel MOSFET General Description Product Summary The AOT280L/AOB280L uses Trench MOSFET VDS technology that is uniquely optimized to provide the most ID (at VGS=10V) 80V 140A efficient high frequency switching performance. Both RDS(ON) (at VGS=10V) < 2.7mΩ (< 2.2mΩ∗) conduction and switching power losses are minimized RDS(ON) (at VGS=6V) < 3.5mΩ (< 3.1mΩ∗) due to an extremely low combination of RDS(ON), Ciss and Coss. This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. 100% UIS Tested 100% Rg Tested AOT280L AOB280L D TO-263 TO220 Top View Bottom View Top View D Bottom View D D D G G D S D S G G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current G Pulsed Drain Current C Avalanche Current C Avalanche energy L=0.3mH C TC=25°C Power Dissipation B TA=25°C Power Dissipation A Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case Steady-State Steady-State V A A IAS 70 A EAS 735 mJ 333 W 166.5 2.1 RθJA RθJC W 1.3 TJ, TSTG Symbol t ≤ 10s ±20 16 PDSM TA=70°C Units V 20.5 PD TC=100°C Maximum 80 560 IDSM TA=70°C S 110 IDM TA=25°C Continuous Drain Current S G 140 ID TC=100°C S -55 to 175 Typ 12 48 0.35 °C Max 15 60 0.45 Units °C/W °C/W °C/W * Surface mount package TO263 Rev.2.0: June 2013 www.aosmd.com Page 1 of 6 AOT280L/AOB280L Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Min ID=250µA, VGS=0V Zero Gate Voltage Drain Current Gate-Body leakage current VDS=0V, VGS=±20V VDS=VGS，ID=250µA 2.4 VGS=10V, VDS=5V 560 ±100 2.5 3.5 mΩ VGS=10V, ID=20A TO263 1.8 2.2 mΩ VGS=6V, ID=20A TO263 2.2 3.1 mΩ VDS=5V, ID=20A Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current TJ=125°C mΩ 76 0.67 G DYNAMIC PARAMETERS Ciss Input Capacitance Gate resistance V A 4.2 Forward Transconductance Rg nA 3.4 3.4 gFS Reverse Transfer Capacitance 2.75 2.7 VSD Crss µA 2.2 TO220 VGS=6V, ID=20A TO220 Output Capacitance V 5 Gate Threshold Voltage On state drain current Coss Units 1 TJ=55°C Static Drain-Source On-Resistance Max 80 VDS=80V, VGS=0V VGS=10V, ID=20A RDS(ON) Typ S 1 V 140 A 11135 VGS=0V, VDS=40V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg(10V) Total Gate Charge VGS=10V, VDS=40V, ID=20A Qgs Qgd Gate Source Charge Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Body Diode Reverse Recovery Time Qrr 0.4 pF 1315 pF 80 pF 0.75 1.2 160 224 Ω nC nC 38 28 30 nC ns 23 ns 75 ns 27 ns IF=20A, dI/dt=500A/µs 44 Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 348 ns nC VGS=10V, VDS=40V, RL=2Ω, RGEN=3Ω A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using or equal to 6V Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Zθ JC Normalized Transient Thermal Resistance 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC 40 RθJC=0.45°C/W 1 PD 0.1 Single Pulse Ton T 0.01 1E-05 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev.2.0: June 2013 www.aosmd.com Page 4 of 6 AOT280L/AOB280L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 350 300 TA=25°C Power Dissipation (W) IAR (A) Peak Avalanche Current 1000 TA=100°C TA=150°C 100 TA=125°C 250 200 150 100 50 10 0 1 10 100 1000 Time in avalanche, tA (µ µs) Figure 12: Single Pulse Avalanche capability (Note C) 0 25 50 75 100 125 150 175 TCASE (°C) Figure 13: Power De-rating (Note F) 150 1000 TA=25°C 100 Power (W) Current rating ID(A) 120 90 60 17 5 2 10 10 30 0 0 25 50 75 100 125 150 1 0.001 175 TCASE (°C) Figure 14: Current De-rating (Note F) Zθ JA Normalized Transient Thermal Resistance 10 1 0.01 0.1 1 10 0100 1000 18 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJA=60°C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Rev.2.0: June 2013 www.aosmd.com Page 5 of 6 AOT280L/AOB280L Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs 90% + Vdd VDC - Rg 10% Vgs Vgs td(on) tr td(off) ton tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 EAR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds Isd Vgs Ig Rev.2.0: June 2013 L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6