AOB286L

AOT286L/AOB286L 80V N-Channel MOSFET General Description Product Summary The AOT286L/AOB286L uses Trench MOSFET VDS technology that is uniquely optimized to provide the most ID (at VGS=10V) 80V 70A efficient high frequency switching performance. Both RDS(ON) (at VGS=10V) < 6.0mΩ (< 5.7mΩ∗) conduction and switching power losses are minimized RDS(ON) (at VGS=6V) < 7.9mΩ (< 7.6mΩ∗) due to an extremely low combination of RDS(ON), Ciss and Coss. This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. 100% UIS Tested 100% Rg Tested AOB286L AOT286L TO-263 TO220 Top View Top View Bottom View D Bottom View D D D D G G D S S D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current G Pulsed Drain Current C Avalanche Current C Avalanche energy L=0.1mH C TC=25°C Power Dissipation B TA=25°C Power Dissipation A Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case Steady-State Steady-State A A IAS 50 A EAS 125 mJ 167 W 83 2.1 RθJA RθJC W 1.3 TJ, TSTG Symbol t ≤ 10s V 13 PDSM TA=70°C ±20 10.5 PD TC=100°C Units V 245 IDSM TA=70°C Maximum 80 55 IDM TA=25°C Continuous Drain Current S 70 ID TC=100°C S G G -55 to 175 Typ 12 48 0.7 °C Max 15 60 0.9 Units °C/W °C/W °C/W * Surface mount package TO263 Rev.2 0: May 2013 www.aosmd.com Page 1 of 6 AOT286L/AOB286L Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Min ID=250µA, VGS=0V Zero Gate Voltage Drain Current V Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage VDS=VGS，ID=250µA 2.3 ID(ON) On state drain current VGS=10V, VDS=5V 245 ±100 nA 2.7 3.3 V 5.0 6.0 8.1 9.8 6.1 7.9 mΩ VGS=10V, ID=20A TO263 4.7 5.7 mΩ VGS=6V, ID=20A TO263 5.8 7.6 mΩ VGS=10V, ID=20A TO220 VGS=6V, ID=20A TO220 TJ=125°C A gFS Forward Transconductance VDS=5V, ID=20A 60 VSD Diode Forward Voltage IS=1A,VGS=0V 0.7 IS Maximum Body-Diode Continuous Current G DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=40V, f=1MHz VGS=10V, VDS=40V, ID=20A Gate Source Charge 0.6 mΩ S 1 V 70 A 3142 pF 435 pF 43 VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qgs µA 5 IGSS Coss Units 1 TJ=55°C Static Drain-Source On-Resistance Max 80 VDS=80V, VGS=0V VGS(th) RDS(ON) Typ pF 1.3 2.0 Ω 44.5 63 nC 12 nC Qgd Gate Drain Charge 8 nC tD(on) Turn-On DelayTime 13.5 ns tr Turn-On Rise Time 11 ns tD(off) Turn-Off DelayTime 32 ns tf Turn-Off Fall Time 11 ns trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs 29 Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 161 ns nC VGS=10V, VDS=40V, RL=2Ω, RGEN=3Ω A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using